The internal quantum efficiency of (In, Ga) N/GaN quantum wells can surpass 90% for blue-
emitting structures at moderate drive current densities but decreases significantly for longer …

This review paper presents an overview of the optical characterization techniques for Indium
Gallium Nitride (InGaN) quantum well (QW) structures at a nanoscale. The two major …

In this paper, we compare and contrast the experimental data and the theoretical predictions
of the low temperature optical properties of polar and nonpolar InGaN/GaN quantum well …

InGaN-based light emitting diodes and multiple quantum wells designed to emit in the green
spectral region exhibit, in general, lower internal quantum efficiencies than their blue …

The efficiency of light emitting diodes (LEDs) remains a topic of great contemporary interest
due to their potential to reduce the amount of energy consumed in lighting. The current …

The scanning capacitance microscope (SCM) is a powerful tool to characterise local
electrical properties in GaN-based high electron mobility transistor (HEMT) structures with …

Radioactive M 27 g (t 1/2= 9.5 min) was implanted into GaN of different doping types at
CERN's ISOLDE facility and its lattice site determined via β− emission channeling. Following …

Atom probe tomography (APT) has been used to characterize the distribution of In atoms
within non-polar a-plane InGaN quantum wells (QWs) grown on a GaN pseudo-substrate …

The GaN-based light emitting diodes (LEDs) have a great potential for visible light
communication (VLC) due to their ubiquitous application in general lighting, but the …

Abstract Ternary In x Ga 1− x N alloys became technologically attractive when p-doping was
achieved to produce blue and green light emitting diodes (LED) s. Starting in the mid …