Recent advancements in wearable electronics offer seamless integration with the human
body for extracting various biophysical and biochemical information for real-time health …

Abstract Two-dimensional (2D) semiconductors have attracted tremendous interest as
atomically thin channels that could facilitate continued transistor scaling. However, despite …

Two-dimensional semiconductors such as layered transition metal dichalcogenides can
offer superior immunity to short-channel effects compared with bulk semiconductors such as …

Two-dimensional transition metal dichalcogenides (2D TMDs) have attracted much attention
in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and …

Realization of wafer-scale single-crystal films of transition metal dichalcogenides (TMDs)
such as WS2 requires epitaxial growth and coalescence of oriented domains to form a …

Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …

Continued reduction in transistor size can improve the performance of silicon integrated
circuits (ICs). However, as Moore's law approaches physical limits, high‐performance …

Graphene is very popular because of its many fascinating properties, but its lack of an
electronic bandgap has stimulated the search for 2D materials with semiconducting …

We present an overview of the main techniques for production and processing of graphene
and related materials (GRMs), as well as the key characterization procedures. We adopt …

Abstract Two-dimensional (2D) semiconducting monolayers such as transition metal
dichalcogenides (TMDs) are promising channel materials to extend Moore's Law in …