The fabrication of next-generation semiconductor devices has created a need for low-
temperature (≤ 400 C) deposition of highly-conformal (> 95%) SiO 2, SiN x, and SiC films …

The atomic layer deposition (ALD) technique allows the synthesis of materials at the atomic
scale to be controlled. ALD has been adapted to design and prepare single-atom catalysts …

In this review, we discuss the progress of emerging dry processes for nanoscale fabrication
of high-aspect-ratio features, including emerging design technology for manufacturability …

Atomic layer deposition (ALD) has emerged as an interesting tool for the atomically precise
design and synthesis of catalytic materials. Herein, we discuss examples in which the atomic …

Rationally combining the advantage of inorganic and organic semiconductors to construct a
heterojunction is an effective way to boost the photocatalytic activity of materials, while it is …

A novel and efficient process was developed for high density silanization of nano-silica
particles using APTES, in which 13.48 APTES nm− 2 was achieved. This process comprises …

During the past decade, atomic layer deposition (ALD) has become an important thin-film
deposition method in microelectronics industry, and it has also gained a lot of interest in …

A plasma-enhanced atomic layer deposition (ALD) process was developed for the growth of
SiN x thin films using Si2Cl6 and NH3 plasma. At substrate temperatures≤ 400° C, we show …

Cu-loaded amino-functionalized SiO 2 and weak-base-anion-exchange resin were
prepared as advanced adsorbents for NH 4+ removal and their adsorption ability and …

Sluggish kinetics of photoexcited charge carriers in photocatalysts, slow hole transfer in
oxidation half‐reaction, and consequent fast charge recombination on photocatalyst surface …