Rapid Flame Synthesis of Atomically Thin MoO3 down to Monolayer Thickness for Effective Hole Doping of WSe2
Two-dimensional (2D) molybdenum trioxide (MoO3) with mono-or few-layer thickness can
potentially advance many applications, ranging from optoelectronics, catalysis, sensors, and …
potentially advance many applications, ranging from optoelectronics, catalysis, sensors, and …
Atomically Controlled Tunable Doping in High‐Performance WSe2 Devices
CS Pang, TYT Hung, A Khosravi… - Advanced Electronic …, 2020 - Wiley Online Library
Abstract 2D transitional metal dichalcogenide (TMD) field‐effect transistors are promising
candidates for future electronic applications, owing to their potential for ultimate device …
candidates for future electronic applications, owing to their potential for ultimate device …
Doping-Induced Schottky-Barrier Realignment for Unipolar and High Hole Current WSe2 Devices With >108 On/Off Ratio
CS Pang, TYT Hung, A Khosravi… - IEEE Electron …, 2020 - ieeexplore.ieee.org
Direct evidence of O 2-plasma induced contact metal Fermi-level realignment is observed in
WSe 2 based SB field-effect transistors (FETs), leading to high hole currents with on/off …
WSe 2 based SB field-effect transistors (FETs), leading to high hole currents with on/off …
[图书][B] Doping and Conformal Non-Planar Growth of 2D Semiconductors
CJ McClellan - 2021 - search.proquest.com
To overcome the limitations of conventional transistor size scaling, recent proposals have
been made to increase transistor density by vertically stacking transistors, in three …
been made to increase transistor density by vertically stacking transistors, in three …
Advanced Channel Engineering for Thin Body Transistors
PY Chien - 2016 - escholarship.org
As transistor dimension kept scaling down, many challenges arises such as worse
electrostatic control and higher variability. In order to address these issues, thin down body …
electrostatic control and higher variability. In order to address these issues, thin down body …