Electrostatic gating and intercalation in 2D materials
The doping or the alteration of crystals with guest species to obtain desired properties has
long been a research frontier in materials science. However, the closely packed lattice …
long been a research frontier in materials science. However, the closely packed lattice …
Transport in two-dimensional topological materials: recent developments in experiment and theory
We review theoretical and experimental highlights in transport in two-dimensional
topological materials over the last five years. Topological materials comprise topological …
topological materials over the last five years. Topological materials comprise topological …
Mapping propagation of collective modes in Bi2Se3 and Bi2Te2.2Se0.8 topological insulators by near-field terahertz nanoscopy
Near-field microscopy discloses a peculiar potential to explore novel quantum state of matter
at the nanoscale, providing an intriguing playground to investigate, locally, carrier dynamics …
at the nanoscale, providing an intriguing playground to investigate, locally, carrier dynamics …
Bulk and boundary invariants for complex topological insulators
E Prodan, H Schulz-Baldes - K, 2016 - Springer
Topological insulators are crystalline solids with supposedly very special properties. If
stumbling upon such a crystal, which is possible because topological insulators are known …
stumbling upon such a crystal, which is possible because topological insulators are known …
Signature of weak-antilocalization in sputtered topological insulator Bi2Se3 thin films with varying thickness
We report a low-temperature magneto transport study of Bi2Se3 thin films of different
thicknesses (40, 80 and 160 nm), deposited on sapphire (0001) substrates, using radio …
thicknesses (40, 80 and 160 nm), deposited on sapphire (0001) substrates, using radio …
Record surface state mobility and quantum Hall effect in topological insulator thin films via interface engineering
Material defects remain as the main bottleneck to the progress of topological insulators (TIs).
In particular, efforts to achieve thin TI samples with dominant surface transport have always …
In particular, efforts to achieve thin TI samples with dominant surface transport have always …
Transport properties of topological insulators: Band bending, bulk metal-to-insulator transition, and weak anti-localization
We reanalyze some of the critical transport experiments and provide a coherent
understanding of the current generation of topological insulators (TIs). Currently TI transport …
understanding of the current generation of topological insulators (TIs). Currently TI transport …
Thickness-dependent transport channels in topological insulator Bi2Se3 thin films grown by magnetron sputtering
WJ Wang, KH Gao, ZQ Li - Scientific Reports, 2016 - nature.com
We study the low-temperature transport properties of Bi2Se3 thin films grown by magnetron
sputtering. A positive magnetoresistance resulting from the weak antilocalization (WAL) …
sputtering. A positive magnetoresistance resulting from the weak antilocalization (WAL) …
Plasmonics of topological insulators at optical frequencies
The development of nanoplasmonic devices, such as plasmonic circuits and metamaterial
superlenses in the visible to ultraviolet frequency range, is hampered by the lack of low-loss …
superlenses in the visible to ultraviolet frequency range, is hampered by the lack of low-loss …
Observation of Anderson localization in ultrathin films of three-dimensional topological insulators
Anderson localization, the absence of diffusive transport in disordered systems, has been
manifested as hopping transport in numerous electronic systems, whereas in recently …
manifested as hopping transport in numerous electronic systems, whereas in recently …