GeSn alloys have already attracted extensive attention due to their excellent properties and
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …

(Si) GeSn semiconductors are finally coming of age after a long gestation period. The
demonstration of device-quality epi-layers and quantum-engineered heterostructures has …

The availability of high-frequency pulsed emitters in the 2–2.5 μm wavelength range paved
the way for a wealth of new applications in ultrafast spectroscopy, free-space and fiber …

We investigate the effect of strain on the morphology and composition of GeSn layers grown
on Ge/Si virtual substrates. By using buffer layers with controlled thickness and Sn content …

The simultaneous control of lattice strain, composition, and microstructure is crucial to
establish high-quality, direct bandgap GeSn semiconductors. Herein, we demonstrate that …

GeSn materials have attracted considerable attention for their tunable band structures and
high carrier mobilities, which serve well for future photonic and electronic applications. This …

Since the first demonstration of lasing in direct bandgap GeSn semiconductors, the research
efforts for the realization of electrically pumped group IV lasers monolithically integrated on …

Monolithic integration of extended short-wave infrared photodetectors (PDs) on silicon is
highly sought-after to implement manufacturable, cost-effective sensing and imaging …

We have investigated the low temperature epitaxy of high Sn content GeSn alloys in a 200
mm industrial Reduced Pressure-Chemical Vapor Deposition tool from Applied Materials …

Ge Sn x alloy films with Sn contents of 3% and 10% were grown on Si wafers by low-
temperature nonequilibrium molecular beam epitaxy. The thermostabilities of the GeSn films …