Titanium (Ti)-doped hafnium oxide (HfO 2) films have garnered dramatical interest by virtue
of their high dielectric constant (k). Ti-doped HfO 2 (HfTiO) films were prepared using plasma …

Abstract Sm, Zr co-doped HfO 2 films were deposited on a p-type silicon wafer using a cost-
effective spin coating method. The influence of Sm, Zr co-doping concentration variation on …

Hf 1-x Zr x O 2 gate dielectric thin films were deposited on Si (100) substrates by RF reactive
co-sputtering with the variation in the RF power of zirconium target. The compositional …

In this work, we have investigated the electronic structure and electrical properties of sputter-
deposited high-k dielectrics grown on p-GaAs substrate with post-deposition annealing at …

This study examines how the substrate temperature affects the electrical characteristics of
the Zr-doped HfO2/Al/Zr-doped HfO2 (HZO/Al/HZO) tri-layer stack. Tri-layer stack is …

Tantalum doped HfO 2 gate dielectric thin films were deposited on silicon substrates using
RF reactive co-sputtering by varying RF power of Ta target from 15 W to 90 W. The …

Over the past decade, tremendous research has drawn considerable attention for
incorporation of high-k dielectric materials to replace the conventional low-k dielectric …

Corrigendum: Investigation of microstructural and electrical properties of composition
dependent co-sputtered Hf1−xTaxO2 thin Page 1 Materials Research Express …