[图书][B] Epitaxy of nanostructures
The general trend in modern solid state physics and technology is to make things smaller.
The size of key elements in modern devices approaches the nanometer scale, for both …
The size of key elements in modern devices approaches the nanometer scale, for both …
Probing the quantum states of self-assembled InAs dots by magnetotunneling spectroscopy
We describe how magnetotunneling spectroscopy can be used to investigate the spatial
form of the wave function of confined electron states in self-assembled InAs quantum dots …
form of the wave function of confined electron states in self-assembled InAs quantum dots …
Generation of terahertz radiation by bulk and surface optical rectification from crystal planes of arbitrary orientation
S Hargreaves, K Radhanpura, RA Lewis - Physical Review B—Condensed …, 2009 - APS
The theory of second-order nonlinear bulk and third-order nonlinear surface electric-field-
induced optical rectification is developed for zinc-blende 4¯ 3 m crystal faces of arbitrary …
induced optical rectification is developed for zinc-blende 4¯ 3 m crystal faces of arbitrary …
Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311) A surfaces
NN Ledentsov, D Litvinov, A Rosenauer… - Journal of electronic …, 2001 - Springer
GaAs-AlAs corrugated superlattices (CSL) are formed on spontaneously nanofaceted (311)
A surfaces. Using high-resolution transmission electron microscopy (HRTEM) along the ̄ …
A surfaces. Using high-resolution transmission electron microscopy (HRTEM) along the ̄ …
Evidence for surface reconstruction on InAs nanocrystals
C McGinley, M Riedler, T Möller, H Borchert, S Haubold… - Physical Review B, 2002 - APS
By means of photoelectron spectroscopy with synchrotron radiation we have studied the
surfaces of colloidally prepared InAs nanocrystals in the 30–60 Å size range. We find …
surfaces of colloidally prepared InAs nanocrystals in the 30–60 Å size range. We find …
Structure of high-index GaAs surfaces–the discovery of the stable GaAs (2 5 11) surface
K Jacobi, L Geelhaar, J Márquez - Applied physics A, 2002 - Springer
We present a brief overview of surface structures of high-index GaAs surfaces, putting
emphasis on recent progress in our own laboratory. By adapting a commercial scanning …
emphasis on recent progress in our own laboratory. By adapting a commercial scanning …
Ordered arrays of vertically correlated GaAs and AlAs quantum wires grown on a surface
D Litvinov, A Rosenauer, D Gerthsen… - Applied physics …, 2002 - pubs.aip.org
We study GaAs–AlAs short-period superlattices (SPSLs) grown on a GaAs (311) A surface
using plan-view transmission electron microscopy (TEM). A strong in-plane compositional …
using plan-view transmission electron microscopy (TEM). A strong in-plane compositional …
Pulsed magnetic fields as a probe of self-assembled semiconductor nanostructures
Pulsed magnetic fields are used to study a variety of self-assembled semiconductor
nanostructures. We illustrate the power of the technique with two recent examples. In the …
nanostructures. We illustrate the power of the technique with two recent examples. In the …
Influence of high-index GaAs substrates on the growth of highly strained (InGa) As/GaAs heterostructures
A systematic study of the optical and microscopic properties of self-assembled quantum dots
in InxGa1− xAs/GaAs heterostructures has been carried out by varying the In concentration …
in InxGa1− xAs/GaAs heterostructures has been carried out by varying the In concentration …
Surface structure of GaAs (2 5 11)
L Geelhaar, Y Temko, J Márquez, P Kratzer, K Jacobi - Physical Review B, 2002 - APS
GaAs samples with orientations vicinal to (2 5 11) within 1 were prepared by molecular
beam epitaxy and analyzed in situ by scanning tunneling microscopy, low-energy electron …
beam epitaxy and analyzed in situ by scanning tunneling microscopy, low-energy electron …