Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices
The advances in lasers, electronic and photonic integrated circuits (EPIC), optical
interconnects as well as the modulation techniques allow the present day society to …
interconnects as well as the modulation techniques allow the present day society to …
1.5-μm indium phosphide-based quantum dot lasers and optical amplifiers: The impact of atom-like optical gain material for optoelectronics devices
S Bauer, V Sichkovskyi, O Eyal… - IEEE …, 2021 - ieeexplore.ieee.org
Using quantum dot (QD) structures as active material for optoelectronics was already in
focus before the development of quantum well (QW) lasers and before semiconductor lasers …
focus before the development of quantum well (QW) lasers and before semiconductor lasers …
Static gain saturation in quantum dot semiconductor optical amplifiers
Measurements of saturated amplified spontaneous emission-spectra of quantum dot
semiconductor optical amplifiers demonstrate efficient replenishment of the quantum-dot …
semiconductor optical amplifiers demonstrate efficient replenishment of the quantum-dot …
Static and dynamic characteristics of an InAs/InP quantum-dot optical amplifier operating at high temperatures
O Eyal, A Willinger, S Banyoudeh, F Schanbel… - Optics …, 2017 - opg.optica.org
We report on high quality InAs/InP quantum dot optical amplifiers for the 1550 nm
wavelength range operating over a wide temperature range of 25 to 100° C. A temperature …
wavelength range operating over a wide temperature range of 25 to 100° C. A temperature …
Dynamic saturation in semiconductor optical amplifiers: accurate model, role of carrier density, and slow light
We developed an improved model in order to predict the RF behavior and the slow light
properties of the SOA valid for any experimental conditions. It takes into account the dynamic …
properties of the SOA valid for any experimental conditions. It takes into account the dynamic …
Cross talk free multi channel processing of 10 Gbit/s data via four wave mixing in a 1550 nm InAs/InP quantum dash amplifier
We demonstrate multi wavelength processing in a broad band 1550 nm quantum dash
optical amplifier. Two 10Gbit/s signals, spectrally separated by 30nm are individually …
optical amplifier. Two 10Gbit/s signals, spectrally separated by 30nm are individually …
Extinction ratio improvement due to a Bogatov-like effect in ultralong semiconductor optical amplifiers
Theoretical results on the extinction ratio (ER) improvement in ultralong semiconductor
optical amplifiers (UL-SOAs) are presented indicating a Bogatov-like effect in the saturated …
optical amplifiers (UL-SOAs) are presented indicating a Bogatov-like effect in the saturated …
Nonlinear pulse propagation in a quantum dot laser
We investigate the nonlinear propagation of an ultra-short, 150 fs, optical pulse along the
waveguide of a quantum dot (QD) laser operating above threshold. We demonstrate that …
waveguide of a quantum dot (QD) laser operating above threshold. We demonstrate that …
Nonlinear effects in ultralong semiconductor optical amplifiers for optical communications. Physics and applications
P Runge - 2010 - osti.gov
The presented work discusses physical properties of ultralong semiconductor optical
amplifiers (UL-SOAs) and some of their possible applications in optical communication …
amplifiers (UL-SOAs) and some of their possible applications in optical communication …
Slow light using semiconductor optical amplifiers: Model and noise characteristics
We developed an improved model in order to predict the RF behavior of the SOA valid for
any experimental conditions. It takes into account the dynamic saturation of the SOA, which …
any experimental conditions. It takes into account the dynamic saturation of the SOA, which …