An analysis of Si-tube based double-material double gate-all-around (DMDGAA) MOSFEts. ICE3.(2020)

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An Analysis of Analog Performance for High-K Gate Stack Dielectric Pocket Double-Gate-All-Around (DP-DGAA) MOSFET

V Purwar, R Gupta, N Kumar, H Awasthi… - … Conference on VLSI …, 2020 - Springer
The present paper deals with incorporating dielectric pocket (DP DP) technology in double-
gate-all-around (DGAA DGAA) MOSFET along with high-K gate insulating material. Its …
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Comparative Study of Silicon and In0.53Ga0.47As-Based Gate-All-Around (GAA) MOSFETs

H Awasthi, N Kumar, V Purwar, A Gupta… - Recent Trends in …, 2022 - Springer
Abstract In this paper, In 0.53 Ga 0.47 As-based GAA MOSFETs have been introduced and
compared with conventional Si-gate-all-around (Si-GAA) MOSFETs for high-performance …
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Investigation of Analog Performance of Double-Gate-All-Around In0. 53Ga0. 47 As-Based Nanotube (DGAA) MOSFET

N Kumar, H Awasthi, V Purwar… - Recent Trends in …, 2021 - books.google.com
In the last two decades, the MOSFET Technology node shifted from micro-meter to nano-
meter to improve Gadget performance, computational speed, and its features. With the …
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Comparative Study of Silicon and Gate-All-Around In0. 53Ga0. 47 As-Based (GAA) MOSFETs

H Awasthi, N Kumar, V Purwar, A Gupta… - Recent Trends in …, 2021 - books.google.com
In the modern society, there has been always demand for uninterrupted communication, fast
computation, and high-quality entertainment with smaller electronic gadgets. MOSFETs are …
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Investigation of Analog Performance of In0.53Ga0.47As-Based Nanotube Double-Gate-All-Around (DGAA) MOSFET

N Kumar, H Awasthi, V Purwar, A Gupta… - … Conference on VLSI …, 2020 - Springer
Abstract The In 0.53 Ga 0.47 As-Based Double-Gate-All-Around (DGAA) device has been
proposed using the ternary alloy (III-V semiconductor alloy). The composite material …
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