Displacement damage, total ionizing dose, and transient ionization effects in gate-all-around field effect transistors
M Titze, A Belianinov, A Tonigan, SS Su… - ACS Applied …, 2024 - ACS Publications
Recent developments in state-of-the-art (SOTA) complementary metal-oxide-
semiconductors (CMOS) integrated circuits (IC) have yielded devices with a robust response …
semiconductors (CMOS) integrated circuits (IC) have yielded devices with a robust response …
14.6 A 10A Computational Digital LDO Achieving 263A/mm2 Current Density with Distributed Power-Gating Switches and Time-Based Fast-Transient Controller for …
In mobile SoC applications, the power rails of multicore CPUs have been merged by CPU
cluster to simplify the PMIC-SoC power rails in limited PCB area (VDD LIT, VDD MID and …
cluster to simplify the PMIC-SoC power rails in limited PCB area (VDD LIT, VDD MID and …
A Computational Digital LDO With Distributed Power-Gating Switches and Time-Based Fast-Transient Controller for Mobile SoC Application
D Lee, S Kim, T Nomiyama, DH Jung… - IEEE Solid-State …, 2024 - ieeexplore.ieee.org
This letter introduces a 10 A computational digital LDO (CDLDO) for mobile SoC application
specifically targeting a big CPU core. The proposed CDLDO eliminates the power-FET area …
specifically targeting a big CPU core. The proposed CDLDO eliminates the power-FET area …
Exploring Ways to Minimize Dropout Voltage for Energy-Efficient Low-Dropout Regulators: Viable approaches that preserve performance
HS Kim - IEEE Solid-State Circuits Magazine, 2023 - ieeexplore.ieee.org
Low-dropout (LDO) regulators are ideal off-chip and on-chip solutions for powering noise-
sensitive loads, such as phase-locked loops, analog-to-digital converters, and sensor …
sensitive loads, such as phase-locked loops, analog-to-digital converters, and sensor …
Research progresses on suppressing the short-channel effects of field-effect transistor
J Huang - Highlights in Science, Engineering and Technology, 2022 - drpress.org
Recently, with the continuous miniaturization and integration of microelectronic devices in all
fields, the conventional MOSFET structure has suffered from severe short channel effects …
fields, the conventional MOSFET structure has suffered from severe short channel effects …
FinFET/GAAFET/CFET 纳电子学的研究进展
赵正平 - 电子与封装, 2024 - ep.org.cn
集成电路延续摩尔定律的发展正在从鳍栅场效应晶体管(FinFET) 纳电子学时代向原子水平上的
埃米时代转变. 综述了该转变阶段的三大创新发展热点, FinFET, 环栅场效应晶体管(GAAFET) …
埃米时代转变. 综述了该转变阶段的三大创新发展热点, FinFET, 环栅场效应晶体管(GAAFET) …
Power Management Integrated Circuits for Implantable Devices
C Wang - Wireless Power Technologies for Biomedical Devices, 2024 - Springer
Implantable devices are inserted into the human body for various purposes such as
monitoring diverse health conditions and/or assisting physical activities [1, 2]. For …
monitoring diverse health conditions and/or assisting physical activities [1, 2]. For …
Wireless Power Technologies for Biomedical Devices
Kluwer International Series in Engineering and Computer Science, is a high level academic
and professional series publishing research on the design and applications of analog …
and professional series publishing research on the design and applications of analog …