We review here recent progress on epitaxial graphene grown on a SiC substrate. Epitaxial
graphene can be easily grown by heating the SiC single crystal in a high vacuum or in an …

Graphene, the leading example of a two-dimensional crystalline material, is exceptionally
conductive of electricity and heat even at 1 atom thickness, taken as 0.34 nm. This short …

The performance of optimized graphene devices is ultimately determined by the quality of
the graphene itself. Graphene grown on copper foils is often wrinkled, and the orientation of …

We present a new fabrication method for epitaxial graphene on SiC which enables the
growth of ultra-smooth defect-and bilayer-free graphene sheets with an unprecedented …

Present methods for producing semiconducting–metallic graphene networks suffer from
stringent lithographic demands, process-induced disorder in the graphene, and scalability …

Semiconductor heterostructures are fundamental building blocks for many important device
applications. The emergence of two-dimensional semiconductors opens up a new realm for …

We investigate the structural, electronic, and transport properties of substitutional defects in
SiC-graphene by means of scanning tunneling microscopy and magnetotransport …

Graphene is a 2-D atomic layer of carbon atoms with unique electronic transport properties
such as a high Fermi velocity, an outstanding carrier mobility, and a high carrier saturation …

The charge carriers in a material can, under special circumstances, behave as a viscous
fluid. In this work, we investigated such behavior by using scanning tunneling potentiometry …

All large-scale graphene films contain extended topological defects dividing graphene into
domains or grains. Here, we spatially map electronic transport near specific domain and …