High‐Speed Photodetectors on Silicon Photonics Platform for Optical Interconnect
A photodetector (PD) converts optical signals into electrical ones and is widely used in
optical interconnect. High‐speed PDs are in high demand as they are necessary to meet …
optical interconnect. High‐speed PDs are in high demand as they are necessary to meet …
Silicon–germanium receivers for short-wave-infrared optoelectronics and communications: High-speed silicon–germanium receivers (invited review)
D Benedikovic, L Virot, G Aubin, JM Hartmann… - …, 2021 - degruyter.com
Integrated silicon nanophotonics has rapidly established itself as intriguing research field,
whose outlets impact numerous facets of daily life. Indeed, nanophotonics has propelled …
whose outlets impact numerous facets of daily life. Indeed, nanophotonics has propelled …
High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm
We introduced photon-trapping microstructures into GeSn-based photodetectors for the first
time, and achieved high-efficiency photo detection at 2 µm with a responsivity of 0.11 A/W …
time, and achieved high-efficiency photo detection at 2 µm with a responsivity of 0.11 A/W …
A route toward high-detectivity and low-cost short-wave infrared photodetection: GeSn/Ge multiple-quantum-well photodetectors with a dielectric nanohole array …
High-detectivity and low-cost short-wave infrared photodetectors with complementary metal–
oxide–semiconductor (CMOS) compatibility are attractive for various applications such as …
oxide–semiconductor (CMOS) compatibility are attractive for various applications such as …
GaAs/GeSn/Ge n–i–p diodes and light emitting diodes formed via grafting
Germanium-tin (GeSn) is a promising semiconductor material for future optoelectronic
devices operating at the near-infrared to mid-infrared spectral range. In this work, we report …
devices operating at the near-infrared to mid-infrared spectral range. In this work, we report …
Photo detection and modulation from 1,550 to 2,000 nm realized by a GeSn/Ge multiple-quantum-well photodiode on a 300-mm Si substrate
A GeSn/Ge multiple-quantum-well (MQW) pin photodiode structure was proposed for
simultaneously realizing high detectivity photo detection with low dark current and effective …
simultaneously realizing high detectivity photo detection with low dark current and effective …
Transferable single-layer GeSn nanomembrane resonant-cavity-enhanced photodetectors for 2 μm band optical communication and multi-spectral short-wave infrared …
Semiconductor nanomembranes (NMs) have emerged as an attractive nanomaterial for
advanced electronic and photonic devices with attractive features such as transferability and …
advanced electronic and photonic devices with attractive features such as transferability and …
GeSn/Ge Multiquantum-Well Vertical-Cavity Surface-Emitting pin Structures and Diode Emitters on a 200 mm Ge-on-Insulator Platform
An efficient monolithically integrated light source with complementary metal-oxide-
semiconductor (CMOS) compatibility remains the missing component to enable Si photonics …
semiconductor (CMOS) compatibility remains the missing component to enable Si photonics …
Growth of relaxed GeSn film with high Sn content via Sn component-grade buffer layer structure
X Liu, J Zheng, M Li, F Wan, C Niu, Z Liu… - Journal of Physics D …, 2021 - iopscience.iop.org
Relaxed GeSn films with a high Sn content (> 13%) were grown on Ge (100) substrates via
magnetron sputtering epitaxy through a component-grade GeSn buffer layer structure …
magnetron sputtering epitaxy through a component-grade GeSn buffer layer structure …
Surface plasmon enhanced GeSn photodetectors operating at 2 µm
Au-hole array and Au-GeSn grating structures were designed and incorporated in GeSn
metal-semiconductor-metal (MSM) photodetectors for enhanced photo detection at 2 µm …
metal-semiconductor-metal (MSM) photodetectors for enhanced photo detection at 2 µm …