The paradigm and the usage of CMOS are changing, and so are the requirements at all
levels, from transistor to an entire CMOS system. The traditional drivers, such as speed and …

2002fOO74584 A1 2006/0050598 A1 2006.005495. 0 A1 2006, OO73657 A1
2006/0076549 A1 2006/0097.288 A1 2006/0098472 A1 2006.0109704 A1 2006.0113614 …

Nonvolatile memory elements that are based on resistive switching memory element layers
are provided. A nonvolatile memory element may have a resistive switching metal oxide …

Nonvolatile memory elements are provided that have resistive switching metal oxides. The
nonvolatile memory elements may be formed by depositing a metal-containing material on a …

High-k development moves towards integration into CMOS processes rising attention for the
reliability assessment. In this paper, the methodology for reliability screening is discussed …

Resistive switching memory elements are provided that may contain electroless metal
electrodes and metal oxides formed from electroless metal. The resistive switching memory …

In one aspect, the present invention provides for a method of forming a device. The method
includes forming a polysili con Stack including a first and a second polysilicon layer with an …

Resistive switching memory elements are provided that may contain electroless metal
electrodes and metal oxides formed from electroless metal. The resistive switching memory …

Nonvolatile memory elements are provided that have resistive switching metal oxides. The
nonvolatile memory elements may be formed by depositing a metal-containing material on a …

Semiconductor devices and methods of manufacture thereof are disclosed. In a preferred
embodiment, a method of manufacturing a semiconductor device includes forming a …