Porous silicon membranes and their applications: Recent advances
Porous silicon (PSi) research has been active for several decades. The multiple properties
and structural features of PSi have made it a promising material for a wide variety of …
and structural features of PSi have made it a promising material for a wide variety of …
Quantifying temperature-dependent substrate loss in GaN-on-Si RF technology
H Chandrasekar, MJ Uren, MA Casbon… - … on Electron Devices, 2019 - ieeexplore.ieee.org
Intrinsic limits to temperature-dependent substrate loss for GaN-on-Si technology, due to the
change in resistivity of the substrate with temperature, are evaluated using an …
change in resistivity of the substrate with temperature, are evaluated using an …
SOI technologies for RF and millimeter-wave applications
This chapter presents an overview of silicon-on-insulator (SOI) technology for radio-
frequency (RF) and millimeter-wave telecommunication applications. The SOI technology …
frequency (RF) and millimeter-wave telecommunication applications. The SOI technology …
Synthesis of silicon nanowire and crystalline carbon quantum dots heterostructure and study of photo response and photoluminescence property
Silicon nanowire based heterostrucure or nanocomposites becomes intrigued in next
generation energy conversion devices. Herein, we have prepared n type silicon nanowires …
generation energy conversion devices. Herein, we have prepared n type silicon nanowires …
Small-and large-signal performance up to 175° C of low-cost porous silicon substrate for RF applications
This paper focuses on the comparison of the RF performances of various advanced trap-rich
(TR) siliconon-insulator (SOI) and porous silicon (PSi) substrates. The PSi substrates are …
(TR) siliconon-insulator (SOI) and porous silicon (PSi) substrates. The PSi substrates are …
Design of coupled slow-wave CPW millimeter-wave bandpass filter beyond 100 GHz in 55-nm BiCMOS technology
The design and experimental results of millimeter-wave bandpass filters (BPFs)
implemented in 55-nm BiCMOS technology and operating around 120 GHz are presented in …
implemented in 55-nm BiCMOS technology and operating around 120 GHz are presented in …
Millimeter-wave resonator based on high quality factor inductor and capacitor based on slow-wave CPS
This work introduces the concept of a quasi-lumped LC resonator integrated in CMOS
technology and based on slow-wave transmission lines. The quasi-lumped inductor and …
technology and based on slow-wave transmission lines. The quasi-lumped inductor and …
Influence of substrate resistivity on porous silicon small-signal RF properties
G Godet, E Augendre, J Lugo-Alvarez… - … on Electron Devices, 2020 - ieeexplore.ieee.org
This article provides guidelines to design porous silicon (PS) layers regarding optimization
of smallsignal properties in passive structures for radio frequency (RF): insertion loss and …
of smallsignal properties in passive structures for radio frequency (RF): insertion loss and …
High Performance Porous Silicon Substrate for the Integration of Millimeter-Wave Passive Devices.
English In this letter, the performance of porous silicon (PSi) substrate dedicated for
millimeter-wave integrated passive circuits is figured out by integrating mm-wave bandpass …
millimeter-wave integrated passive circuits is figured out by integrating mm-wave bandpass …
Effect of Substrate Resistivity on Spiral Inductor in Radio Frequency Bands
SOI (Silicon-on-Insulator) technology, considering its development and benefits compared to
silicon Bulk technology, is considered very promising to meet the increased demands of the …
silicon Bulk technology, is considered very promising to meet the increased demands of the …