Stability, reliability, and robustness of GaN power devices: A review
Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and
form factor of power electronics. However, the material composition, architecture, and …
form factor of power electronics. However, the material composition, architecture, and …
Power electronics reliability: State of the art and outlook
H Wang, F Blaabjerg - IEEE Journal of Emerging and Selected …, 2020 - ieeexplore.ieee.org
This article aims to provide an update of the reliability aspects of research on power
electronic components and hardware systems. It introduces the latest advances in the …
electronic components and hardware systems. It introduces the latest advances in the …
SiC and GaN devices with cryogenic cooling
This article presents the cryogenically cooled application for wide bandgap (WBG)
semiconductor devices. Characteristics of silicon carbide (SiC) and gallium nitride (GaN) at …
semiconductor devices. Characteristics of silicon carbide (SiC) and gallium nitride (GaN) at …
High-scalability enhanced gate drivers for SiC MOSFET modules with transient immunity beyond 100 V/ns
Silicon-carbide (SiC) transistors with growing readiness for the power converter market have
raised an emerging need for high-performance gate driver (GD) units to maximize their …
raised an emerging need for high-performance gate driver (GD) units to maximize their …
Review of fault detection and diagnosis techniques for AC motor drives
MA Gultekin, A Bazzi - Energies, 2023 - mdpi.com
Condition monitoring in electric motor drives is essential for operation continuity. This article
provides a review of fault detection and diagnosis (FDD) methods for electric motor drives. It …
provides a review of fault detection and diagnosis (FDD) methods for electric motor drives. It …
A comprehensive review of gan-based bi-directional on-board charger topologies and modulation methods
The wide-scale adoption and accelerated growth of electric vehicle (EV) use and increasing
demand for faster charging necessitate the research and development of power electronic …
demand for faster charging necessitate the research and development of power electronic …
An integrated GaN overcurrent protection circuit for power HEMTs using SenseHEMT
GaN power high-electron-mobility transistors (HEMTs), with their fast switching transients
and poor overcurrent tolerance, require overcurrent protection (OCP) circuits that can …
and poor overcurrent tolerance, require overcurrent protection (OCP) circuits that can …
650-V E-mode p-GaN gate HEMT with Schottky source extension towards enhanced short-circuit reliability
J Yu, J Wei, M Wang, J Yang, Y Wu… - IEEE Electron …, 2023 - ieeexplore.ieee.org
A 650-V p-GaN gate HEMT with Schottky source extension is proposed towards enhanced
short-circuit (SC) reliability. At higher drain bias, a pinch-off point is formed at the edge of the …
short-circuit (SC) reliability. At higher drain bias, a pinch-off point is formed at the edge of the …
Analytical model for two-dimensional electron gas charge density in recessed-gate GaN high-electron-mobility transistors
A physics-based analytical model for GaN high-electron-mobility transistors (HEMTs) with
non-recessed-and recessed-gate structure is presented. Based on this model, the two …
non-recessed-and recessed-gate structure is presented. Based on this model, the two …
A simple desaturation-based protection circuit for GaN HEMT with ultrafast response
Similar to other power semiconductors, gallium nitride enhancement-mode high-electron-
mobility transistors (GaN E-HEMTs) require short-circuit protection (SCP) or overcurrent …
mobility transistors (GaN E-HEMTs) require short-circuit protection (SCP) or overcurrent …