Thin‐Film Transistors for Integrated Circuits: Fundamentals and Recent Progress

A Yan, C Wang, J Yan, Z Wang, E Zhang… - Advanced Functional …, 2024 - Wiley Online Library
High‐performance thin‐film transistors (TFTs) integrated circuits (ICs) have become
increasingly necessary to meet the emerging demands such as healthcare, edge computing …

Flexible oxide thin film transistors, memristors, and their integration

A Panca, J Panidi, H Faber… - Advanced Functional …, 2023 - Wiley Online Library
Flexible electronics have seen extensive research over the past years due to their potential
stretchability and adaptability to non‐flat surfaces. They are key to realizing low‐power …

All-Solution-Processed Electronics with Sub-Microscale Resolution and Nanoscale Fidelity Fabricated Via a Humidity-Controlled, Surface Energy-Directed Assembly …

J Zhang, G Wang, Z Chai, Z Li, S Yuan, Y Wang… - ACS …, 2024 - ACS Publications
Solution-based processes have received considerable attention in the fabrication of
electronics and sensors owing to their merits of being low-cost, vacuum-free, and simple in …

Biomimetic wafer-scale alignment of tellurium nanowires for high-mobility flexible and stretchable electronics

Y Zhao, S Zhao, X Pang, A Zhang, C Li, Y Lin, X Du… - Science …, 2024 - science.org
Flexible and stretchable thin-film transistors (TFTs) are crucial in skin-like electronics for
wearable and implantable applications. Such electronics are usually constrained in …

Flexible Nanoscale Amorphous Oxide Transistors with a Gold-Assisted Transfer Method

S Wahid, A Daus, V Chen, E Pop - ACS Applied Materials & …, 2024 - ACS Publications
We present a new approach to achieve nanoscale transistors on ultrathin flexible substrates
with conventional electron-beam lithography. Full devices are first fabricated on a gold …

Phhgraphene: An Anisotropic Dirac Material with Intrinsic Self-Doping Features and a Tunable Band Structure

S Wang, B Yang - ACS Applied Electronic Materials, 2024 - ACS Publications
Two-dimensional (2D) Dirac cone materials have important prospects in high-performance
electronic devices due to their unique electronic structure. In this study, we propose a 2D …

Contact‐Engineering of Self‐Aligned‐Gate Metal Oxide Transistors Processed via Electrode Self‐Delamination and Rapid Photonic Curing

L Luo, H Faber, C Liu, S Doukas… - Advanced Functional …, 2024 - Wiley Online Library
Metal oxide thin‐film transistors (TFTs) offer remarkable opportunities for applications in
emerging transparent and flexible microelectronics. Unfortunately, their performance is …

High Performance Indium–Tin–Oxide Schottky Diodes for Terahertz Band Operation

K Han, Y Kang, YH Tu, C Wu, C Wang, L Liu… - Nano Letters, 2024 - ACS Publications
Schottky diode, capable of ultrahigh frequency operation, plays a critical role in modern
communication systems. To develop cost-effective and widely applicable high-speed …

Enhanced stability in InSnO transistors via ultrathin in-situ AlOx passivation

J Li, Y Chen, Q Gao, T Cao, J Ma, D Li, L Zheng… - Applied Surface …, 2024 - Elsevier
In this study, we present the impact of an ultrathin in-situ AlO x passivation layer on the
electrical performance and stability of InSnO (ITO) transistors. Devices incorporating an …

Strain Effect on Dielectricity of Elastic Thermoplastic Polyurethanes

Y Wang, H Yang, Y Xie, X Bao, L Pan, D Zhao, J Chen… - Polymers, 2024 - mdpi.com
Dielectric elastomers, such as thermoplastic polyurethanes (TPUs), are widely used as the
dielectric layer, encapsulation layer, and substrate of flexible and stretchable devices. To …