Thallium Chalcogenide-Based Wide-Band-Gap Semiconductors: TlGaSe2 for Radiation Detectors
The wide-band-gap semiconductor thallium gallium selenide (TlGaSe2) is promising for X-
ray and γ-ray detection. In this study, the synthesis and crystal growth of semiconducting …
ray and γ-ray detection. In this study, the synthesis and crystal growth of semiconducting …
Optical, electrical conduction and dielectric properties of TlGaSe2 layered single crystal
MM El-Nahass, MM Sallam, SA Rahman, EM Ibrahim - Solid state sciences, 2006 - Elsevier
The optical properties of layered single crystals of TlGaSe2 have been studied. The spectral
and optical parameters have been determined using spectrophotometric measurements of …
and optical parameters have been determined using spectrophotometric measurements of …
Ultrathin ternary semiconductor TlGaSe2 phototransistors with broad-spectral response
Abstract Ternary layered III–III–VI 2-type metal chalcogenides are a comparatively new
group of semiconductors and have attracted strong interest due to their distinct optical and …
group of semiconductors and have attracted strong interest due to their distinct optical and …
Photoelectrical properties of TlGaSe2 single crystals
S Ozdemir, M Bucurgat - Solid state sciences, 2014 - Elsevier
The spectral distribution of photocurrent (PC) of TlGaSe 2 single crystals in the range of
wavelengths between 500 nm and 700 nm possesses a single maximum at 2.04 eV …
wavelengths between 500 nm and 700 nm possesses a single maximum at 2.04 eV …
The Urbach tails and optical absorption in layered semiconductor TlGaSe2 and TlGaS2 single crystals
TlGaSe 2 and TlGaS 2 single crystals were grown by the modified Bridgman-Stockbarger
method. We report the result of an experimental study of the optical absorption of TlGaSe 2 …
method. We report the result of an experimental study of the optical absorption of TlGaSe 2 …
Growth and crystal structure of the layered compound TlGaSe2
GE Delgado, AJ Mora, FV Pérez… - Crystal Research and …, 2007 - Wiley Online Library
The semiconducting compound TlGaSe2 was grown by solid state reaction technique. The
crystal structure of this material was confirmed by single‐crystal X‐ray diffraction. TlGaSe2 …
crystal structure of this material was confirmed by single‐crystal X‐ray diffraction. TlGaSe2 …
Optoelectronic and electrical properties of TlGaS2 single crystal
AF Qasrawi, NM Gasanly - physica status solidi (a), 2005 - Wiley Online Library
The optoelectronic and electrical properties of TlGaS2 single crystals have been
investigated by means of room temperature transmittance and reflectance spectral analysis …
investigated by means of room temperature transmittance and reflectance spectral analysis …
Temperature effect on dark electrical conductivity, Hall coefficient, space charge limited current and photoconductivity of TlGaS2 single crystals
AF Qasrawi, NM Gasanly - Semiconductor science and …, 2005 - iopscience.iop.org
The dark electrical conductivity, Hall coefficient, space charge limited current, and
illumination and temperature dependences of the photocurrent of TlGaS 2 single crystals in …
illumination and temperature dependences of the photocurrent of TlGaS 2 single crystals in …
Development and characterization of TlGaSe2 thin film-based photodetector for visible-light photodetector applications
In current work a thermal evaporation technique has been employed to fabricate the thin
films from the grown TlGaSe 2 single crystal and investigated. X-ray diffraction study …
films from the grown TlGaSe 2 single crystal and investigated. X-ray diffraction study …
Effects of indium selenide substrates on the performance of niobium pentoxide optoelectronic devices
To widen the photo-responsivity range of niobium pentoxide photodetectors, InSe thin films
were deposited by thermal evaporation technique under high vacuum pressure and used as …
were deposited by thermal evaporation technique under high vacuum pressure and used as …