Synthesis and applications of III–V nanowires
E Barrigón, M Heurlin, Z Bi, B Monemar… - Chemical …, 2019 - ACS Publications
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …
dimensional examples, have developed into one of the most intensely studied fields of …
Compositionally graded III-nitride alloys: Building blocks for efficient ultraviolet optoelectronics and power electronics
Wide bandgap aluminum gallium nitride (AlGaN) semiconductor alloys have established
themselves as the key materials for building ultraviolet (UV) optoelectronic and power …
themselves as the key materials for building ultraviolet (UV) optoelectronic and power …
Pt/AlGaN nanoarchitecture: toward high responsivity, self-powered ultraviolet-sensitive photodetection
Energy-saving photodetectors are the key components in future photonic systems.
Particularly, self-powered photoelectrochemical-type photodetectors (PEC–PDs), which …
Particularly, self-powered photoelectrochemical-type photodetectors (PEC–PDs), which …
Ultraviolet optoelectronic devices based on AlGaN-SiC platform: Towards monolithic photonics integration system
Rapid advancement of wide-bandgap AlGaN semiconductor materials offers tremendous
opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced …
opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced …
Unambiguously enhanced ultraviolet luminescence of AlGaN wavy quantum well structures grown on large misoriented sapphire substrate
High‐quality epitaxy consisting of Al1− xGaxN/Al1− yGayN multiple quantum wells (MQWs)
with sharp interfaces and emitting at≈ 280 nm is successfully grown on sapphire with a …
with sharp interfaces and emitting at≈ 280 nm is successfully grown on sapphire with a …
Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review
III-nitride deep ultraviolet (DUV) light-emitting diodes (LEDs) have been identified as
promising candidates for energy-efficient, environment-friendly and robust UV lighting …
promising candidates for energy-efficient, environment-friendly and robust UV lighting …
Tuning the charge transfer dynamics of the nanostructured GaN photoelectrodes for efficient photoelectrochemical detection in the ultraviolet band
The intriguing surface sensitivity of the single‐crystalline semiconductor nanowires offers
tremendous opportunity in tuning the physical properties of nanophotonic and …
tremendous opportunity in tuning the physical properties of nanophotonic and …
Achieving record high external quantum efficiency> 86.7% in solar‐blind photoelectrochemical photodetection
Controlling interfacial and surface carrier dynamics associated with nanostructured
semiconductors is the key to achieving outperforming electrical and optical characteristics in …
semiconductors is the key to achieving outperforming electrical and optical characteristics in …
Photovoltage‐competing dynamics in photoelectrochemical devices: achieving self‐powered spectrally distinctive photodetection
Multiple‐band and spectrally distinctive photodetection play critical roles in building next‐
generation colorful imaging, spectroscopy, artificial vision, and optically controlled logic …
generation colorful imaging, spectroscopy, artificial vision, and optically controlled logic …
Advantages of AlGaN-based deep-ultraviolet light-emitting diodes with an Al-composition graded quantum barrier
AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) still suffer from poor
quantum efficiency and low optical power. In this work, we proposed a DUV LED structure …
quantum efficiency and low optical power. In this work, we proposed a DUV LED structure …