Along with deep scaling transistors and complex electronics information exchange networks,
very-large-scale-integrated (VLSI) circuits require high performance and ultra-low power …

As the interconnect delay exceeds the gate delay, the integrated circuit (IC) technology has
evolved from a transistor-centric era to an interconnect-centric era. Conventional metallic …

In this article, we propose a carbon nanotube (CNT) field-effect transistor (CNFET)-based
static random access memory (SRAM) design at the 5-nm technology node that is optimized …

The unique electrochemical performance of the transition metal sulfide-based electrode
materials attracts researchers to develop high-performance energy storage devices. In this …

In recent years, the aggressive downscaling of electronic components has led to highly
dense and power-hungry devices. With Moore's law expected to soon reach its physical …

With the technological advances in wearable and portable electronic devices, the demands
for associated technologies including flexible energy storage devices increase. Among …

The size and parameter optimization for the 5-nm carbon nanotube field effect transistor
(CNFET) static random access memory (SRAM) cell was presented in Part I of this article …

In this paper, we investigate, by combining electrical measurements with an atomistic-to-
circuit modeling approach, the conductance of doped standalone multiwall carbon …

This review focuses on the recent advances of metallic carbon nanotubes (m-CNTs) towards
their implementation as interconnects in high-frequency (HF) applications. S-parameters of …