Magnetic tunnel junction applications
Spin-based devices can reduce energy leakage and thus increase energy efficiency. They
have been seen as an approach to overcoming the constraints of CMOS downscaling …
have been seen as an approach to overcoming the constraints of CMOS downscaling …
End-to-end timing analysis in ROS2
Modern autonomous vehicle platforms feature many interacting components and sensors,
which add to the system complexity and affect their performance. A key aspect for such …
which add to the system complexity and affect their performance. A key aspect for such …
Novel nonvolatile lookup table design based on voltage-controlled spin orbit torque memory
X Liu, E Deng, H Zhang, Y Zhang… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
Nonvolatile lookup table (NVLUT) is promising for constructing reconfigurable logic device,
such as field programmable gate array (FPGA). In the last decade, there have been …
such as field programmable gate array (FPGA). In the last decade, there have been …
A Reliability-Enhanced Differential Sensing Amplifier for Hybrid CMOS/MTJ Logic Circuits
C Wang, T Yang, M Han, D Wang - Electronics, 2023 - mdpi.com
Recently, hybrid logic circuits based on magnetic tunnel junctions (MTJs) have been widely
investigated to realize zero standby power. However, such hybrid CMOS/MTJ logic circuits …
investigated to realize zero standby power. However, such hybrid CMOS/MTJ logic circuits …
Reliability analysis of NAND-like spintronic memory
N Maciel, EC Marques, LAB Naviner, H Cai… - Microelectronics …, 2019 - Elsevier
This work deals with magnetic tunnel junction (MTJ) based non-volatile memories (NVMs)
and focuses on radiation issues. We investigate the Single Event Transient (SET) effects on …
and focuses on radiation issues. We investigate the Single Event Transient (SET) effects on …
Energy and Area Efficient Machine Learning Architectures using Spin-Based Neurons
H Pourmeidani - 2022 - stars.library.ucf.edu
Recently, spintronic devices with low energy barrier nanomagnets such as spin orbit torque-
Magnetic Tunnel Junctions (SOT-MTJs) and embedded magnetoresistive random access …
Magnetic Tunnel Junctions (SOT-MTJs) and embedded magnetoresistive random access …
Ns-ftl: Alleviating the uneven bit-level wearing of nvram-based ftl via nand-spin
Non-Volatile random access memory (NVRAM) has been regarded as a promising DRAM
alternative with its nonvolatility, near-zero idle power consumption, and byte addressability …
alternative with its nonvolatility, near-zero idle power consumption, and byte addressability …
Low-power and radiation resilient approaches for spectrum sensing
NM de Paiva Junior - 2020 - theses.hal.science
The advancement of technology has enabled a great increase in the number of users and
the amount of information to be transmitted. In recent years, the demand for high download …
the amount of information to be transmitted. In recent years, the demand for high download …