The wide bandgap semiconductors SiC and GaN are already commercialized as power
devices that are used in the automotive, wireless, and industrial power markets, but their …

The remote sensing and satellite community working for space organizations have
expressed interest in building advanced devices with potential choices for Gallium Nitride …

Polymorphs are common in nature and can be stabilized by applying external pressure in
materials. The pressure and strain can also be induced by the gradually accumulated …

The successful growth of non–van der Waals (vdW) group-III nitride epilayers on vdW
substrates not only opens an unprecedented opportunity to obtain high-quality …

While radiation is known to degrade AlGaN/GaN high-electron-mobility transistors (HEMTs),
the question remains on the extent of damage governed by the presence of an electrical …

The authors present a concurrent Monte Carlo (MC)–molecular dynamics (MD) approach to
modeling matter response to excitation of its electronic system at nanometric scales. The two …

This article considers the effect of MoO3 and SiO additives in telluride glasses on the
shielding characteristics and protection of electronic microcircuits operating under …

Accelerators are behind many major scientific and technological breakthroughs giving a
gigantic contribution to unveil the mysteries of matter. This quest continues nowadays using …

The widespread adoption of gGaN in radiation‐hard semiconductor devices relies on a
comprehensive understanding of its response to strongly ionizing radiation. Despite being …

Gallium nitride (GaN)-based devices have significant potential for space applications.
However, the mechanisms of radiation damage to the device, particularly from strong …