Comprehensive study on Sb-doped zinc oxide films deposited on c-plane Al2O3 substrates
Y Cheng, J Chen, X Zhang, T Yu, K Yang… - Journal of Materials …, 2018 - Springer
Undoped and Sb-doped p-type ZnO films were grown on (001) sapphire using metal organic
chemical vapor deposition (MOCVD) technology. The crystal, optical, and electrical …
chemical vapor deposition (MOCVD) technology. The crystal, optical, and electrical …
Behavior Study of ZnO Thin Films Grown by PLD for Several Applications
In this work, the effects of glass and Si polycrystalline substrates on structural,
morphological, optical and electrical properties of zinc oxide thin films (ZnO) deposited at …
morphological, optical and electrical properties of zinc oxide thin films (ZnO) deposited at …
Manufacturing and electrical characterization of Al-doped ZnO-coated silicon nanowires
The p-type Si nanowires were synthesized via deep reactive ion etching (DRIE). Al-doped
ZnO films were coated on a p-Si nanowires substrate using the sol-gel method. Al-doped …
ZnO films were coated on a p-Si nanowires substrate using the sol-gel method. Al-doped …
Investigation of structural and optical properties of ZnO: Cu co-sputtered thin films
P Khosravi, F Karimzadeh… - Materials Research …, 2019 - iopscience.iop.org
Cu-doped zinc oxide thin films with various Cu-doping concentrations were deposited on
glass substrates by using co-sputtering method. Coatings were performed at room …
glass substrates by using co-sputtering method. Coatings were performed at room …
Comparison of heterojunction device parameters for pure and doped ZnO thin films with IIIA (Al or In) elements grown on silicon at room ambient
In this work, pure and IIIA element doped ZnO thin films were grown on p type silicon (Si)
with (100) orientated surface by sol-gel method, and were characterized for comparing their …
with (100) orientated surface by sol-gel method, and were characterized for comparing their …
A Substantial linear red shift in the band gap in heavily copper doped zinc oxide thin films produced by co-sputtering
MF Al-Kuhaili, SA Baqraf, SMA Durrani - Journal of Materials Science …, 2017 - Springer
Zinc oxide is a wide band gap semiconductor that has found potential applications in
ultraviolet optoelectronics. Its utilization in the visible range necessitates its energy gap be …
ultraviolet optoelectronics. Its utilization in the visible range necessitates its energy gap be …
[引用][C] A Special Issue on 2D and 1D Materials: Trends in Low Dimensions for Nanoelectronics and Energy Applications
MA Shehzad, EV Woods… - Journal of …, 2019 - American Scientific Publishers