Lattice strain and defects analysis in nanostructured semiconductor materials and devices by high‐resolution X‐ray diffraction: Theoretical and practical aspects
The reliability of semiconductor materials with electrical and optical properties are
connected to their structures. The elastic strain field and tilt analysis of the crystal lattice …
connected to their structures. The elastic strain field and tilt analysis of the crystal lattice …
Effect of the lattice mismatch on threading dislocations in heteroepitaxial GaN layers revealed by X-ray diffraction
In this study, structural investigations of the mismatched gallium nitride (GaN) layers grown
on SiC, Al 2 O 3 and Si substrate, were performed employing x-ray diffraction techniques …
on SiC, Al 2 O 3 and Si substrate, were performed employing x-ray diffraction techniques …
Leakage currents and Fermi-level shifts in GaN layers upon iron and carbon-doping
Semi-insulating GaN is a prerequisite for lateral high frequency and high power electronic
devices to isolate the device region from parasitic conductive channels. The commonly used …
devices to isolate the device region from parasitic conductive channels. The commonly used …
The Impact of AlxGa1−xN Back Barrier in AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Six-Inch MCZ Si Substrate
HY Wang, HC Chiu, WC Hsu, CM Liu, CY Chuang… - Coatings, 2020 - mdpi.com
In this study, AlGaN/GaN high electron mobility transistors (HEMTs) with AlGaN back
barriers (BB) were comprehensively investigated based on the different Al mole fractions …
barriers (BB) were comprehensively investigated based on the different Al mole fractions …
Unravelling the strain relaxation processes in silicon nanowire arrays by X-ray diffraction
Investigations performed on silicon nanowires of different lengths by scanning electron
microscopy revealed coalescence processes in longer nanowires. Using X-ray diffraction …
microscopy revealed coalescence processes in longer nanowires. Using X-ray diffraction …
Density of bunched threading dislocations in epitaxial GaN layers as determined using X-ray diffraction
X-ray diffraction is one of the most popular experimental methods employed for
determination of dislocation densities, as it can recognize both the strain fields and the local …
determination of dislocation densities, as it can recognize both the strain fields and the local …
The effects of two-stage HT-GaN growth with different V/III ratios during 3D–2D transition
The aim of the study is to understand the effects of two stages of HT-GaN growth with
different V/III ratios on optical, chemical and structural characteristics of the HT-GaN layer. In …
different V/III ratios on optical, chemical and structural characteristics of the HT-GaN layer. In …
Growth and thermal annealing for acceptor activation of p-type (Al) GaN epitaxial structures: Technological challenges and risks
III-nitride materials, such as ternary alloys of gallium nitride (GaN) and aluminum nitride
(AlN), are the prominent semiconductor systems in research and industry due to their …
(AlN), are the prominent semiconductor systems in research and industry due to their …
Characteristic analysis of algan/gan hemt with composited buffer layer on high-heat dissipation poly-aln substrates
CR Huang, HC Chiu, CH Liu, HC Wang, HL Kao… - Membranes, 2021 - mdpi.com
In this study, an AlGaN/GaN high-electron-mobility transistor (HEMT) was grown through
metal organic chemical vapor deposition on a Qromis Substrate Technology (QST). The …
metal organic chemical vapor deposition on a Qromis Substrate Technology (QST). The …
Modification of elastic deformations and analysis of structural and optical changes in Ar+-implanted AlN/GaN superlattices
The effects of built-in deformation and stress relaxation on the structural and optical
properties for a 21-period AlN/GaN superlattice (SL) after implantation with argon ions have …
properties for a 21-period AlN/GaN superlattice (SL) after implantation with argon ions have …