The present review describes mainly the history of SnO2-based voltage-dependent
resistors, discusses the main characteristics of these polycrystalline semiconductor systems …

This paper proposes a polaronic stacking fault defect model as the origin of the huge
dielectric properties in CaCu 3 Ti 4 O 12 (CCTO) materials. The model reconciles the …

Abstract The applicability of CaCu 3 Ti 4 O 12 (CCTO) ceramics in modern microelectronics
has been widely investigated; however, CaCu 3 Ti 4 O 12 suffers large loss tangents, which …

Abstract CaCu 3 Ti 4 O 12/CaTiO 3 (CCTO/CTO) composites with additions of x% SnO 2 (x=
0, 1, 2, and 5%) were prepared using the low cost, nontoxic, and simple solid-state reaction …

CaCu 3 Ti 4 O 12 (CCTO) ceramics doped with rare earth (RE) oxides, including Y 2 O 3, La
2 O 3, Eu 2 O 3, and Gd 2 O 3, were prepared by the traditional solid–state reaction method …

Abstract The CaCu 3 Ti 4 O 12 ceramic, CCTO, remains as the best material due to its high
dielectric constant. In this context, Sr-doped CCTO, Ni-doped CCTO and Sr, Ni co-doped …

Abstract CaCu 3 Ti 4 O 12 (CCTO) ceramic was prepared by the solid-state method. The
microstructure, dielectric properties, complex impedance and nonlinear I–V characteristic …

The dielectric properties and voltage–current nonlinearity of the pure and various cobalt-
doped CaCu 3 Ti 4 O 12 (Co-doped CCTO) prepared by solid-state reactions were …

The dielectric and nonlinear ohmic properties of pure CaCu 3 Ti 4 O 12 and compositionally
graded CaCu 3-x Co x Ti 4 O 12 (x= 0, 0.05, 0.10, 0.15 and 0.20) thin films prepared by a …

Significantly enhanced varistor properties via tailoring interface states were obtained in Ca 1–
2 x/3 Y x Cu 3 Ti 4 O 12-SrCu 3 Ti 4 O 12 composite ceramics. The breakdown field was …