Abstract Systems, methods, and apparatus are provided for single crystalline silicon stack
formation and bonding to a complimentary metal oxide semiconductor (CMOS) wafer for …

Examples herein relate to three-dimensional (3D) dynamic random access memory (DRAM)
and corresponding methods. In an example, a film stack is formed on a substrate. The film …

Some embodiments include an integrated assembly having first and second source/drain
regions laterally offset from one another. Metal silicide is adjacent to lateral surfaces of the …

Abstract Systems, methods, and apparatus are provided for single crystalline silicon stack
formation and bonding to a complimentary metal oxide semiconductor (CMOS) wafer for …

Abstract Systems, methods and apparatus are provided for an array of vertically stacked
memory cells having horizontally oriented access devices and storage nodes. The …