The growing number of smart connected devices raises challenges in system reliability.
Prediction of failures in Internet of Things (IoT) ecosystems is a significant problem …

Reliability, a crucial requirement in any modern microprocessor, assures correct execution
over its lifetime. As mission critical components are becoming common in commodity …

The equations for the average oxide fields for carrier tunnelling across the metal-gated MOS
devices in accumulation and having charges in the oxide have been derived in this article. It …

This study aimed to comprehensively understand the performance and degradation of both
p-and n-channel vertical double diffused MOS (VDMOS) transistors under bias temperature …

Integrated circuit susceptibility to radiation-induced faults remains a major reliability concern.
The continuous downscaling of device feature size and the reduction in supply voltage in …

The latest process technologies have become highly susceptible to asymmetric aging,
whereby the timing of logical elements degrades at unequal rates over the element lifetime …

The electrostatic discharge (ESD) phenomenon is a critical reliability concern, and the
charged device model (CDM) is well known for its relatively high voltage peak with few …

As semiconductor processes enter the nanoscale, system-on-chip (SoC) interconnects suffer
from link aging owing to negative bias temperature instability (NBTI), hot carrier injection …

In this thesis, on-resistance degradation caused by hot-carrier injection (HCI) in 16 V n-type
LDMOS devices is studied and characterized. The HCI susceptibility of these devices …

Self-heating poses critical reliability concerns in the nanoscale transistors. It leads to carrier
scattering, which, affects the Device Figure of Merits (FOMs). The degradation in the device …