Theoretical models of Schottky-barrier height formation are reviewed. A particular emphasis
is placed on the examination of how these models agree with general physical principles …

Role of Hot Electrons and Metal–Oxide Interfaces in Surface Chemistry and Catalytic
Reactions | Chemical Reviews ACS ACS Publications C&EN CAS Find my institution Log In …

The formation of the Schottky barrier height (SBH) is a complex problem because of the
dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface …

Dissipation of chemical energy released in exothermic reactions at metal surfaces may
happen adiabatically by creation of phonons or non-adiabatically by excitation of the …

Ballistic-electron emission microscopy (BEEM) is a relatively new technique, based on the
scanning-tunneling microscope, to study potential steps at interfaces with a lateral resolution …

Abstract Tung has shown [Phys. Rev. B 45, 13 509 (1992)] that a range of “nonideal”
behaviors observed in metal/semiconductor (MS) Schottky diodes could be quantitatively …

Ballistic-electron-emission microscopy (BEEM) spectroscopy has been performed on Au/Si
(111) structures as a function of Au thickness and temperature. At 77 K a direct signature of …

Ballistic electron emission microscopy (BEEM) has been used to determine the Fermi-level
pinning position at the Au/InAs interface. Using BEEM's three-terminal capabilities, collector …

Ballistic electron emission spectroscopy is used to investigate current attenuations in thin
films of Pd/Si, from which the elastic and inelastic mean free paths are uniquely determined …

Ballistic electron emission microscopy (BEEM) measurements have been made, as a
function of Au thickness, of Au (111)/Si (111) and Au (111)/Si (100) interfaces, fabricated and …