We study the quantum-confined Stark effect in single InAs/GaAs quantum dots embedded within a AlGaAs/GaAs/AlGaAs quantum well. By significantly increasing the barrier height …
DB Malins, A Gomez-Iglesias, SJ White… - Applied Physics …, 2006 - pubs.aip.org
The authors report a direct measurement of the absorption dynamics in an InAs p‐i‐n ridge waveguide quantum dot modulator. The carrier escape mechanisms are investigated via …
The capability to embed self-assembled quantum dots (QDs) at predefined positions in nanophotonic structures is key to the development of complex quantum-photonic …
M Weiß, JB Kinzel, FJR Schülein, M Heigl… - Nano …, 2014 - ACS Publications
We probe and control the optical properties of emission centers forming in radial heterostructure GaAs-Al0. 3Ga0. 7As nanowires and show that these emitters, located in …
A Persano, M De Giorgi, A Fiore, R Cingolani… - Acs Nano, 2010 - ACS Publications
We report on photoconduction and optical properties of aligned assemblies of core− shell CdSe/CdS nanorods prepared by a seeded growth approach. We fabricate oriented layers …
Y Andres, G Thouand, M Boualam… - Applied Microbiology and …, 2000 - Springer
The present work was devoted to the study of the biosorption capacities of various microbial species (Bacillus subtilis, Pseudomonas aeruginosa, Ralstonia metallidurans CH34 …
R Oulton, JJ Finley, AD Ashmore, IS Gregory… - Physical Review B, 2002 - APS
By application of external electric field, we demonstrate the ability to controllably manipulate the homogenous linewidth of exciton transitions in a single self-assembled In (Ga) As …
We report on the first fabrication of In, GaAs/GaAs quantum dots with both vertical and lateral ordering forming a three-dimensional array. An investigation of the photoluminescence …
InAs/InP quantum dots are excellent sources of telecom single-photon emission and are among the most promising candidates for scalable quantum photonic circuits. However …