Silicon electro-optic micro-modulator fabricated in standard CMOS technology as components for all silicon monolithic integrated optoelectronic systems
K Xu - Journal of Micromechanics and Microengineering, 2021 - iopscience.iop.org
In this paper, optoelectronic characteristics and related switching behavior of one
monolithically integrated silicon light-emitting device (LED) with an interesting wavelength …
monolithically integrated silicon light-emitting device (LED) with an interesting wavelength …
Optical and Structural Properties of Si Nanocrystals in SiO2 Films
T Nikitin, L Khriachtchev - Nanomaterials, 2015 - mdpi.com
Optical and structural properties of Si nanocrystals (Si-nc) in silica films are described. For
the SiO x (x< 2) films annealed above 1000° C, the Raman signal of Si-nc and the …
the SiO x (x< 2) films annealed above 1000° C, the Raman signal of Si-nc and the …
Silicon nanoscale materials: From theoretical simulations to photonic applications
L Khriachtchev, S Ossicini, F Iacona… - International Journal …, 2012 - Wiley Online Library
The combination of photonics and silicon technology is a great challenge because of the
potentiality of coupling electronics and optical functions on a single chip. Silicon …
potentiality of coupling electronics and optical functions on a single chip. Silicon …
Light absorption in silicon quantum dots embedded in silica
The photon absorption in Si quantum dots (QDs) embedded in SiO 2 has been
systematically investigated by varying several parameters of the QD synthesis. Plasma …
systematically investigated by varying several parameters of the QD synthesis. Plasma …
Optical bandgap of semiconductor nanostructures: methods for experimental data analysis
Determination of the optical bandgap (E g) in semiconductor nanostructures is a key issue in
understanding the extent of quantum confinement effects (QCE) on electronic properties and …
understanding the extent of quantum confinement effects (QCE) on electronic properties and …
Low-voltage onset of electroluminescence in nanocrystalline-Si/SiO2 multilayers
Thin film metal-oxide-semiconductor light emitting devices (LEDs) based on nanocrystalline
silicon multilayer structure were grown by plasma-enhanced chemical vapor deposition …
silicon multilayer structure were grown by plasma-enhanced chemical vapor deposition …
Direct-current and alternating-current driving Si quantum dots-based light emitting device
W Mu, P Zhang, J Xu, S Sun, J Xu… - IEEE Journal of …, 2013 - ieeexplore.ieee.org
Light emitting devices based on Si quantum dots/SiO 2 multilayers with dot size of 2.5 nm
have been prepared. Bright white light emission is achieved under the dc driving conditions …
have been prepared. Bright white light emission is achieved under the dc driving conditions …
[图书][B] Silicon, germanium, and their alloys: growth, defects, impurities, and nanocrystals
G Kissinger, S Pizzini - 2014 - books.google.com
Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …
materials still demand research, eminently in view of the improvement of knowledge on …
The role of the surfaces in the photon absorption in Ge nanoclusters embedded in silica
The usage of semiconductor nanostructures is highly promising for boosting the energy
conversion efficiency in photovoltaics technology, but still some of the underlying …
conversion efficiency in photovoltaics technology, but still some of the underlying …
Light harvesting with Ge quantum dots embedded in SiO2 or Si3N4
S Cosentino, E Sungur Ozen, R Raciti… - Journal of Applied …, 2014 - pubs.aip.org
Germanium quantum dots (QDs) embedded in SiO 2 or in Si 3 N 4 have been studied for
light harvesting purposes. SiGeO or SiGeN thin films, produced by plasma enhanced …
light harvesting purposes. SiGeO or SiGeN thin films, produced by plasma enhanced …