The detection of ionizing radiation such as X‐ray, γ‐ray, α‐particle, and neutrons has been
widely required in medical and industrial areas. Perovskite semiconductor detectors are …

We present a review of the current status of research into new semiconductor materials for
use as particle tracking detectors in very high radiation environments. This work is carried …

The role of dopants on deformation and mechanical properties of 4H silicon carbide (4H-
SiC) is proposed by using nanoindentation. It is found that the hardness, elastic modulus …

Сделано заключение, что прогресс последних лет в получении совершенных пленок
SiC (разностная концентрация примесей (3· 1014− 3· 1015) см− 3, плотность полых …

Available results of studying the radiation resistance of SiC and developing the nuclear-
radiation detectors based on SiC are analyzed. The data on the ionization energies, capture …

Different approaches to prepare SiC crystals with high semi-insulating yield and
homogeneous electrical properties by adding a vanadium source in PVT SiC bulk growth …

Radiation detectors have been fabricated on 8 mm× 8 mm substrates,~ 390 μm in thickness,
diced from a (0001) 4H-SiC semi-insulating (SI) wafer (≥ 10 12 Ohm-cm). The crystals used …

The electronic levels of vanadium in semi-insulating 4 H-and 6 H-Si C have been
reinvestigated using temperature dependent Hall effect and resistivity measurements at …

We carried out a theoretical investigation on the electronic and structural properties of typical
residual transition metal impurities in silicon carbide. The calculations were performed using …

Basal plane dislocations (BPDs) are one of the most harmful dislocations in 4H silicon
carbide (4H-SiC). Understanding the nucleation of BPDs is the basis of reducing the density …