High-frequency power converters enabled by wide bandgap (WBG) and silicon
semiconductor devices offer distinct advantages in power density and dynamic performance …

The double pulse test (DPT) is a widely accepted method to evaluate the dynamic behavior
of power devices. Considering the high switching-speed capability of wide band-gap …

This paper presents a comprehensive study on the influences of parasitic elements on the
MOSFET switching performance. A circuit-level analytical model that takes MOSFET …

Wide bandgap (WBG) devices are becoming increasingly popular due to their excellent
material properties. WBG devices are commercially available in discrete and module …

This paper presents an experimental parametric study of the parasitic indu waveform
ringing, switching loss, device stress, and electromagnetic interference. Based on the results …

To support the study of potential utilization of the emerging silicon carbide (SiC) devices, two
SiC active switches, namely 1.2 kV, 5 A SiC JFET manufactured by SiCED, and 1.2 kV, 20 A …

With growing interests in low-inductance silicon carbide (SiC)-based power module
packaging, it is vital to focus on system-level design aspects to facilitate easy integration of …

1200 V SiC MOSFET is a suitable replacement for Si insulated gate bipolar transistors due
to its improved switching behavior. However, high di/dt and dv/dt of SiC MOSFET cause very …

This paper proposes a novel packaging method for insulated-gate bipolar transistor (IGBT)
modules based on the concepts of P-cell and N-cell. The novel packaging reduces the stray …

Advanced power semiconductor devices, especially wide band-gap devices, have inherent
capability for fast switching. However, due to the limitation of gate driver capability and the …