The design of electrically driven quantum dot devices for quantum optical applications asks
for modeling approaches combining classical device physics with quantum mechanics. We …

Optical control of spin in semiconductors has been pioneered using nanostructures of III-V
and II-VI semiconductors, but the emergence of two-dimensional van der Waals materials …

We present results on investigations of 9xx nm, GaAs-based diode lasers with 100 μm wide,
4 mm long stripes operating at temperatures between 200 and 300 K. As temperatures are …

Electrical parameters and surface topography of aluminum (Al) implanted layers in 4H
silicon carbide (SiC) are analyzed. The implantation is conducted for temperatures from …

In this paper, ways to create silicon carbide p+-emitters with high injection coefficients are
considered. Raising the emitter doping level, eliminating the deteriorated layer, and making …

Nuclear battery is a promising long-life power source. Selecting semiconductors with high
limit efficiency and appropriate device structures effectively improves their output …

The theory of nucleation of nanoscale structures of the adsorbed atoms (adatoms), which
occurs as a result of the self-consistent interaction of adatoms with the surface acoustic wave …

In this paper, we consider the problem of the research and development of high-speed
semiconductor photodetectors suitable for operation as parts of on-chip optical …

A quasi-classical method for calculating the narrowing of the Hubbard gap between the A 0
and A+ acceptor bands in a hole semiconductor or the D 0 and D–donor bands in an …

In the paper, the effect of the electric field on the conditions of formation and on the period of
the surface superlattice of adatoms in $ n $-GaAs semiconductor is investigated. It is …