Over the past decade, the primary focus for improving the performance of nano-electronic
metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) …

Semiconductor device dimensions have been decreasing steadily over the past several
decades, generating the need to overcome fundamental limitations of both the materials …

Despite the rapid increase in the number of newly developed processes, area-selective
atomic layer deposition (ALD) of nitrides is largely unexplored. ALD of nitrides at low …

High aspect ratio titanium nitride (TiN) grating structures are fabricated by the combination of
deep reactive ion etching (DRIE) and atomic layer deposition (ALD) techniques. TiN is …

High-dielectric constant (high-k) gate oxides and low-dielectric constant (low-k) interlayer
dielectrics (ILD) have dominated the nanoelectronic materials research scene over the past …

This study demonstrates the atomic layer epitaxial growth of titanium nitride (TiN) with a
record-low resistivity (8.2× 1 0− 8 Ω∙ m) by hydrogen-manipulated chemical reaction on each …

In microelectronics technologies, patterning of sub-100 nm width ridges capped with a
titanium nitride mask can lead to undulations of the ridges detrimental to performances. This …

Isotropic plasma atomic layer etching (ALE) was developed for titanium nitride (TiN) through
a three-step process: plasma oxidation, plasma fluorination, and thermal removal at low …

The demand for precisely controlled etching is increasing as semiconductor device
geometries continue to shrink. To fulfill this demand, cyclic atomic level/layer etching will …

For the next technological generations of integrated circuits, the traditional challenges faced
by etch plasmas (profile control, selectivity, critical dimensions, uniformity, defects,…) …