This paper develops a 200 W two-stage rail grade dc-dc module based on gallium-nitride
devices. It converts a wide input voltage (64-160 V) to a constant output voltage (24 V) …

To overcome the problem of energy losses in the electrical circuits and to improve the
energy conversion efficiency, it is necessary to increase the power switch frequency and …

Recently, radiated electromagnetic interference (EMI) has become a research hotspot in
power electronics systems, as the switching frequencies of power electronics systems have …

This paper presents the development of a Class-D full-bridge zero-voltage switching (ZVS)
inverter, applicable to wireless power transfer (WPT) systems, operating at 13.56 MHz …

The threshold voltage (VTH) of an enhancement-mode Schottky-type p-GaN gate high-
electron-mobility transistor (HEMT) is found to have a special dependence on the drain bias …

A non-segmented PSpice model of silicon carbide metal-oxide semiconductor field effect
transistor (SiC mosfet) with temperature-dependent parameters is proposed in this paper …

The gallium nitride high electron mobility transistors (GaN HEMTs) are a superior candidate
for the new-generation power electronics systems with higher efficiency and power density …

A predictive algorithm for accurately determining the crosstalk peaks caused by SiC
MOSFETs is proposed in this article, which is very important to better design the drive and …

This paper presents a universal SPICE model for field-effect transistors, which is
independent from technology and semiconductor material. The created behavioral …

GaN high electron mobility transistors (HEMTs) represent an emerging and key enabling
technology for obtaining highly efficient and compact power electronic systems. The use of …