AlN/Si interface engineering to mitigate RF losses in MOCVD grown GaN-on-Si substrates
Fabrication of low-RF loss GaN-on-Si HEMT stacks is critical to enable competitive front-end-
modules for 5G and 6G applications. The main contribution to RF losses is the interface …
modules for 5G and 6G applications. The main contribution to RF losses is the interface …
[PDF][PDF] Characterization, modelling and mitigation of substrate-induced effects in RF GaN-on-Si technology
P Cardinael - 2024 - dial.uclouvain.be
Future telecommunication generations require semiconductor technologies that can deliver
large RF power to the antenna with excellent efficiency and linearity at RF and mm-wave …
large RF power to the antenna with excellent efficiency and linearity at RF and mm-wave …
[PDF][PDF] Depleted AlN/Si interfaces for minimizing RF loss in GaN-on-Si HEMTs
H Hahn, C Mauder, M Marx, Z Gao… - CS Mantech 2024 …, 2024 - dial.uclouvain.be
1AIXTRON SE, Dornkaulstr. 2, 52134 Herzogenrath, Germany; 2imec, Kapeldreef 75, 3001
Leuven, Belgium; 3Université catholique de Louvain (UCLouvain), Place du Levant; 3 …
Leuven, Belgium; 3Université catholique de Louvain (UCLouvain), Place du Levant; 3 …