This review compares the mechanical and thermal-electrical properties of sintered copper
(Cu) with sintered silver (Ag) as bonding materials in the microelectronics joint applications …

Over the past decade, the primary focus for improving the performance of nano-electronic
metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) …

The surfaces of electrodeposited Cu 2 O films grown using a variety of solution conditions
have been examined using X-ray photoelectron spectroscopy (XPS). Sodium and carbon …

Nanoscale patterning of materials is widely used in a variety of device applications. Area
selective atomic layer deposition (ALD) has shown promise for deposition of patterned …

Carbothermic reduction of oxide minerals is one of the major routes to obtain the
corresponding metals. This process produces a lot of CO 2, which is responsible for …

BACKGROUND The use of copper as a conductive interconnect material is favored in
semiconductor devices because of the high speed that copper provides. Copper is difficult to …

Cu/SiO2 hybrid bonding with planarized dielectric and isolated metal connections can
realize ultradense interconnects (eg,≤ 1 μm) by eliminating the microbumps and underfill …

Plasma processing is one of the key technologies worldwide, especially using nonthermal,
low-temperature plasmas. Recently, the situation is characterized by the fast-growing …

The thermal atomic layer deposition (ALD) of copper oxide films from the nonfluorinated yet
liquid precursor bis (tri--butylphosphane) copper (I) acetylacetonate,, and wet on Ta, TaN …

We developed the forced convection (FC)-PECVD method for the synthesis of graphene, in
which a specially designed blowing plasma source is used at moderate gas pressure (1–10 …