Terahertz (THz) luminescence in doped nanostructures with GaAs/AlGaAs quantum wells is
studied under conditions of interband optical pumping. The study is carried out on …

The low-temperature impurity-assisted photoconductivity and absorption spectra of a
nanostructure with acceptor-doped multiple GaAs/AlGaAs quantum wells are investigated …

A high-electron-mobility Ga As/Al 0.36 Ga 0.64 As heterostructure is processed by electron-
beam lithography to fabricate samples with a separation of the current-supplying Ohmic …

We have observed photoinduced negative optical conductivity, or gain, in the terahertz
frequency range in a GaAs multiple-quantum-well structure in a strong perpendicular …

Photo-and electroluminescence in p–i–n structures with compensated GaAs/AlGaAs
quantum wells have been studied. Two structures with different doping profiles were studied …

В работе проведены сравнительные исследования фотолюминесценции (ФЛ)
ближнего ИК-диапазона в структурах с квантовыми ямами n GaAs/AlGaAs с …

In the paper, comparative studies of near-IR photoluminescence (PL) in structures with
GaAs/AlGaAs quantum wells possessing different selective doping profiles have been …

Электромагнитное излучение терагерцевого (ТГц) частотного диапазона, занимающее
область спектра между оптическим инфракрасным и микроволновым излучением …

The present work is devoted to the experimental investigation of the far-, mid-and near-
infrared photoconductivity related to the optical hole transitions involving acceptor states in …

A review of the results of studies of terahertz radiation associated with impurity electron
transitions in n-doped GaAs/AlGaAs quantum wells under conditions of interband optical …