For over 70 years, ferroelectric materials have been one of the central research topics for
condensed matter physics and material science, an interest driven both by fundamental …

Abstract 2D van der Waals ferroelectrics have emerged as an attractive building block with
immense potential to provide multifunctionality in nanoelectronics. Although several …

Ferroelectric interfacial devices consist of materials systems whose interfacial electronic
properties (such as a 2D electron gas or an interfacial magnetic spin configuration) are …

Memory devices with high speed and high density are highly desired to address the
'memory wall'issue. Here we demonstrated a highly scalable, three-dimensional stackable …

Ferroelectric capacitive memories have not achieved the commercial success originally
hoped for them in large volume because the area of the capacitors (“footprint”) is too large to …

This work reports a resistive switching effect observed at rectifying Pt/Bi1–δFeO3 interfaces
and the impact of Bi deficiencies on its characteristics. Since Bi deficiencies provide hole …

Nonvolatile bipolar resistive switching has been observed in an Au/BiFeO 3/Pt structure,
where a Schottky contact and a quasi-Ohmic contact were formed at the Au/BiFeO 3 and …

Ultrathin ferroelectric films are of increasing interests these years, owing to the need of
device miniaturization and their wide spectrum of appealing properties. Recent advanced …

Second-order memristors are considered as ideal synaptic emulators for their capability of
exhibiting Ca 2+-like dynamics. Recently, ferroelectric second-order memristors were …

Ferroelectric diodes with polarization-modulated Schottky barriers are promising for
applications in resistive switching (RS) memories. However, they have not achieved …