Growth AlxGa1− xN films on Si substrates by magnetron sputtering and high ammoniated two-step method
X Wang, X Su, F Hu, L He, L He, Z Zhang… - Journal of Alloys and …, 2016 - Elsevier
In this paper, Al x Ga 1− x N films on Si substrates were synthesized with adjusting process
parameters by magnetron sputtering and high ammoniated two-step method innovatively …
parameters by magnetron sputtering and high ammoniated two-step method innovatively …
Quasi-homoepitaxial GaN-based blue light emitting diode on thick GaN template
JZ Li, YB Tao, ZZ Chen, XZ Jiang, XX Fu… - Chinese …, 2013 - iopscience.iop.org
The high power GaN-based blue light emitting diode (LED) on an 80-μm-thick GaN template
is proposed and even realized by several technical methods like metal organic chemical …
is proposed and even realized by several technical methods like metal organic chemical …
Luminescence studies in InxGa1− xN epitaxial layers with different indium contents
TY Wu, CC Chang, KK Tiong, YC Lee, SY Hu, LY Lin… - Optical Materials, 2013 - Elsevier
The optical properties of In x Ga 1− x N epitaxial layers (x= 0.02, 0.04, 0.11, 0.15, 0.30 and
0.33) grown by metalorganic chemical vapor deposition (MOCVD) have been investigated …
0.33) grown by metalorganic chemical vapor deposition (MOCVD) have been investigated …
[PDF][PDF] 氢化物气相外延生长高质量GaN 膜生长参数优化研究
张李骊， 刘战辉， 修向前， 张荣， 谢自力 - 物理学报, 2013 - wulixb.iphy.ac.cn
系统研究了低温成核层生长时间, 高温生长时的V/III 比以及生长温度对氢化物气相外延生长GaN
膜晶体质量的影响. 研究发现合适的低温成核层为后续高温生长提供成核中心 …
膜晶体质量的影响. 研究发现合适的低温成核层为后续高温生长提供成核中心 …
Effect of InxGa1− xN “continuously graded" buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition
WN Qian, SC Su, H Chen, ZG Ma, KB Zhu… - Chinese …, 2013 - iopscience.iop.org
In this paper we report on the effect of an In x Ga 1− x N continuously graded buffer layer on
an InGaN epilayer grown on a GaN template. In our experiment, three types of buffer layers …
an InGaN epilayer grown on a GaN template. In our experiment, three types of buffer layers …