The present inventors have studied to develop a technique to form a coating film of
AlNaforementioned on a facet of a cavity to implement a nitride semiconductor laser device …

A nitride-based semiconductor laser device includes a facet coating film including an
alteration preventing layer formed on a light reflecting side facet of a nitride-based …

ABSTRACT A nitride-based semiconductor laser device includes a front facet located on a
forward end of an optical waveguide and formed by a substantially (000-1) plane of a nitride …

The present invention provides a nitride semiconductor laser element, comprising: a nitride
semiconductor structure hav ing a? rst nitride semiconductor layer, a second nitride semi …

A nitride semiconductor light-emitting device includes a laminate structure formed of a
plurality of nitride semiconductor layers including a light-emitting layer, and having cavity …

It is an object of the invention to provide a method of manufacturing a high-reliability nitride
semiconductor laser that reduces the stress of a nitride dielectric film formed on a resonator's …

(57) ABSTRACT A nitride semiconductor laser chip is provided that offers sufficient reliability
even at high output. The nitride semicon ductor laser chip has a nitride semiconductor layer …

A nitride semiconductor light emitting device includes a nitride semiconductor multilayer film.
The nitride semiconductor multilayer film is formed on a substrate and made of nitride …

The present invention comprises a light absorption film 5 which is formed on the outermost
surface of an end surface on the light emitting side of a chip used in a laser device, typi cally …

Provided is a highly reliable nitride semiconductor laser element having a robust end face
protection film not being peeled even in laser operation. The nitride semiconductor laser …