Atomically engineered, high-speed non-volatile flash memory device exhibiting multibit data storage operations

G Dastgeer, S Nisar, A Rasheed, K Akbar, VD Chavan… - Nano Energy, 2024 - Elsevier
Non-volatile memory devices, which offer large capacity and mechanical dependability as a
mainstream technology, have played a key role in fostering innovation in modern …

Nanomaterials Based Micro/Nanoelectromechanical System (MEMS and NEMS) Devices

Z Torkashvand, F Shayeganfar, A Ramazani - Micromachines, 2024 - mdpi.com
The micro-and nanoelectromechanical system (MEMS and NEMS) devices based on two-
dimensional (2D) materials reveal novel functionalities and higher sensitivity compared to …

Resonant plasmonic detection of terahertz radiation in field-effect transistors with the graphene channel and the black-AsP gate layer

V Ryzhii, C Tang, T Otsuji, M Ryzhii, V Mitin… - Scientific Reports, 2023 - nature.com
We propose the terahertz (THz) detectors based on field-effect transistors (FETs) with the
graphene channel (GC) and the black-Arsenic (b-As) black-Phosphorus (bP), or black …

All-carbon negative differential resistance nanodevice using a single flake of nanoporous graphene

R Rahighi, O Akhavan, AS Zeraati… - ACS Applied …, 2021 - ACS Publications
A temperature-induced degenerate p-type graphene nanopore/reduced graphene oxide
(GNP/rGO) heterojunction-based nanodevice was prepared and studied for the first time …

Gate-Tunable Negative Differential Resistance Behaviors in a hBN-Encapsulated BP-MoS2 Heterojunction

F Wu, H Tian, Z Yan, J Ren, T Hirtz, G Gou… - … Applied Materials & …, 2021 - ACS Publications
Two-dimensional (2D) heterostructures show great potential in achieving negative
differential resistance (NDR) effects by Esaki diodes and or resonant tunneling diodes …

Sub-bandgap Voltage Electroluminescence and Magneto-oscillations in a WSe2 Light-Emitting van der Waals Heterostructure

J Binder, F Withers, MR Molas, C Faugeras… - Nano Letters, 2017 - ACS Publications
We report on experimental investigations of an electrically driven WSe2 based light-emitting
van der Waals heterostructure. We observe a threshold voltage for electroluminescence …

DFT investigation of hydrogenated cove-edged boron nitride nanoribbons for resonant tunneling diodes application

AK Rakesh, R Kumar, A Govindan, S Kharwar… - Solid State …, 2023 - Elsevier
The cove-defect is found to improve the stability of the nanoribbons through bond length
reconstructions at the cove-edge. Density functional theory (DFT) and non-equilibrium …

Double negative differential transconductance characteristic: from device to circuit application toward quaternary inverter

JH Lim, J Shim, BS Kang, G Shin, H Kim… - Advanced Functional …, 2019 - Wiley Online Library
Multi‐valued logic (MVL) computing, which uses more than three logical states, is a
promising future technology for handling huge amounts of data in the forthcoming “big data” …

Negative differential resistance in carbon-based nanostructures

SA Evlashin, MA Tarkhov, DA Chernodubov… - Physical Review …, 2021 - APS
Nonlinear electrical properties, such as negative differential resistance (NDR), are essential
in numerous electrical circuits, including memristors. Several physical origins have been …

Controllable potential barrier for multiple negative-differential-transconductance and its application to multi-valued logic computing

S Seo, J Koo, JW Choi, K Heo, M Andreev… - npj 2D Materials and …, 2021 - nature.com
Various studies on multi-valued-logic (MVL) computing, which utilizes more than two logic
states, have recently been resumed owing to the demand for greater power saving in the …