[HTML][HTML] On the accurate determination of absorption coefficient from reflectanceand transmittance measurements: application to Fe-doped GaN

DC Look, JH Leach - Journal of Vacuum Science & Technology B, 2016 - pubs.aip.org
For light impinging normally on the surface of a double-side-polished sample of thickness d,
the sample's absorption coefficient α can be determined from the well-known formula for …

First-principles investigation on the optoelectronic performance of Mg doped and Mg–Al co-doped ZnO

X Si, Y Liu, W Lei, J Xu, W Du, J Lin, T Zhou, L Zheng - Materials & Design, 2016 - Elsevier
We investigate the band structure, density of states and optical properties of Mg doped and
Mg–Al co-doped ZnO by adopting the first-principles calculation of plane wave ultra-soft …

Photoluminescence from c-axis oriented ZnO films synthesized by sol-gel with diethanolamine as chelating agent

O Marin, M Tirado, N Budini, E Mosquera… - Materials Science in …, 2016 - Elsevier
ZnO films were synthesized on SiO 2/Si substrates through the sol-gel technique using
diethanolamine as chelating agent and annealed in Ar+ O 2 atmospheres with different O 2 …

Thickness dependence of the structural, electrical, and optical properties of amorphous indium zinc oxide thin films

DC Tsai, ZC Chang, BH Kuo, YH Wang… - Journal of Alloys and …, 2018 - Elsevier
Indium zinc oxide (IZO) films were grown by direct current magnetron sputtering from
vacuum hot-pressed ceramic oxide targets of In 2 O 3: ZnO with a weight ratio of 7: 3 onto …

Investigation of the thickness effect on material and surface texturing properties of sputtered ZnO: Al films for thin-film Si solar cell applications

X Yan, W Li, AG Aberle, S Venkataraj - Vacuum, 2016 - Elsevier
Abstract Transparent conductive Al-doped ZnO (AZO) layers are widely used as the front
electrode for thin-film silicon solar cells. For superstrate configurations, the front AZO layer …

Film thickness effect in c-axis oxygen vacancy-passivated ZnO prepared via atomic layer deposition by using H2O2

Y Wang, KM Kang, M Kim, HH Park - Applied Surface Science, 2020 - Elsevier
The presence of oxygen vacancies in zinc oxide is a long-standing problem preventing the
fabrication of p-type ZnO materials; however, the use of H 2 O 2 as the oxygen source for …

Effect of film thickness on structural and optical properties of sol-gel spin coated aluminum doped zinc oxide (Al: ZnO) thin films

RK Pandey, K Ghosh, S Mishra, JP Bange… - Materials Research …, 2018 - iopscience.iop.org
Abstract Al doped ZnO (Al: ZnO, 1 at%) thin films of varying thickness are deposited on
silicon (Si) substrates using sol-gel spin coating method. The thermally annealed films are …

Processing and study of optical and electrical properties of (Mg, Al) co-doped ZnO thin films prepared by RF magnetron sputtering for photovoltaic application

C Abed, S Fernández, S Aouida, H Elhouichet… - Materials, 2020 - mdpi.com
In this study, high transparent thin films were prepared by radio frequency (RF) magnetron
sputtering from a conventional solid state target based on ZnO: MgO: Al2O3 (10: 2 wt%) …

An insight into the low doping efficiency of Al in sol–gel-derived ZnO: Al films: role of the dopant chemical state

MW Zhu, HB Ma, PH Jin, YN Jin, N Jia, H Chen… - Applied Physics A, 2020 - Springer
We prepared aluminum-doped zinc oxide (ZnO: Al, AZO) films by a sol–gel method and
investigated the effect of doping on the electrical properties of AZO films in the Al doping …

Some physical properties of nanostructured Al doped ZnO thin films synthesized by RF magnetron sputtering at room temperature

V Şenay - Journal of Materials Science: Materials in Electronics, 2019 - Springer
In this research, AZO thin films were deposited on glass substrates with 70 W, 100 W and
125 W RF powers at room temperature by RF magnetron sputtering technique. The …