High-performance LED fabrication

MJ Cich, AJF David, C Hurni, R Aldaz… - US Patent …, 2017 - Google Patents
High-performance light-emitting diode together with apparatus and method embodiments
thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to …

Method for manufacture of bright GaN LEDs using a selective removal process

AJ Felker, RL Aldaz, M Batres - US Patent 8,912,025, 2014 - Google Patents
US8912025B2 - Method for manufacture of bright GaN LEDs using a selective removal process
- Google Patents US8912025B2 - Method for manufacture of bright GaN LEDs using a selective …

Method and system for dicing substrates containing gallium and nitrogen material

MR Krames, T Margalith, R Aldaz - US Patent 8,597,967, 2013 - Google Patents
The present disclosure relates generally to semiconductor techniques. More specifically,
embodiments of the present disclosure provide methods for efficiently dicing substrates …

Method for smoothing surface of a substrate containing gallium and nitrogen

A Chakraborty, A Tyagi - US Patent 9,646,827, 2017 - Google Patents
Disclosed is a method for processing GaN based substrate material for manufacturing light-
emitting diodes, lasers, and other types of devices. In various embodiments, a GaN substrate …

High-performance LED fabrication

MJ Cich, AJF David, C Hurni, R Aldaz… - US Patent …, 2020 - Google Patents
High-performance light-emitting diode together with apparatus and method embodiments
thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to …

Gallium and nitrogen containing trilateral configuration for optical devices

M Batres, A David - US Patent 9,076,926, 2015 - Google Patents
US9076926B2 - Gallium and nitrogen containing trilateral configuration for optical devices -
Google Patents US9076926B2 - Gallium and nitrogen containing trilateral configuration for optical …