Raman spectra of synthesised As 2 S 3: Sn samples with up to 2.7 at% Sn recorded at a
moderate excitation power density (P exc= 4 kW/cm 2) show their amorphous character …

Raman spectra of (As1–xBix) 2S3 glass samples with x≤ 0.2 measured at the excitation
with above‐bandgap (532 nm) laser light at a relatively low power density (Pexc= 4 kW/cm2) …

Photoinduced deformation of an amorphous As 2 S 3 film surface under illumination by sub-
bandgap (638 nm) and above-bandgap (532 nm) polarized laser light at oblique incidence …

Raman spectra of thermally evaporated As 2 Se 3 and Se-rich (above 50 at.%) ternary As–
Se–S films measured at high (above 1 MW cm− 2) excitation power density reveal new …

Micro‐Raman spectra of amorphous As–Se–S: Cd films prepared by thermal evaporation on
silicon and silicate glass substrates measured at different laser power densities show the …

Abstract Amorphous Cd-doped GeS 2 films were prepared by thermal evaporation. In the
Raman spectra of GeS 2: Cd films with nominal Cd content above 8% at high laser power …

The model of self-consistent spatial redistribution of the interstitial zinc and the oxygen
vacancies in the ZnO semiconductor under the influence of pulsed laser irradiation in …

TlInSe 2 films with thickness from 10 to 200 nm were thermally evaporated on silicon and
silicate glass substrates. Micro-Raman spectra measured at a moderate excitation (532 nm …