Along with the increasing maturity for the material and process of the wide bandgap
semiconductor silicon carbide (SiC), the insulated gate bipolar transistor (IGBT) representing …

Extensive research in wide-bandgap material technology such as silicon carbide (SiC) has
led to the development of medium-voltage (MV) power semiconductor devices with blocking …

Medium-voltage (MV) silicon carbide (SiC) devices have opened up new areas of
applications which were previously dominated by silicon-based IGBTs. From the perspective …

Silicon Carbide (SiC) semiconductor technology offers the possibility to manufacture power
devices with un-precedented blocking voltages in the range of 10... 15 kV and superior …

High-performance gate drive power supply (GDPS) plays a crucial role in ensuring the
reliability and safety of the gate driver for power semiconductor devices. This article focuses …

The auxiliary power supply (APS) is one of the critical components inside medium-voltage
(MV) power converters. Besides high insulation capability and small footprint, low common …

With features such as faster switching frequency and higher breakdown voltage, wide
bandgap power devices are key enablers to address the increasing demand for higher …

This article presents the design and optimization of a suitable topology for an isolated dc-dc
auxiliary power supply with high isolation voltage and low coupling capacitance. The …

This article proposes an optimized design for a wireless power transfer converter serving as
an auxiliary power supply in a medium-voltage, high modular conversion system. A CLLC …

This paper presents a galvanically isolated gate driver system for medium voltage SiC-
MOSFETs. A low common mode coupling capacity of 1 pF and good electrical insulation of …