A review of switching slew rate control for silicon carbide devices using active gate drivers
Driving solutions for power semiconductor devices are experiencing new challenges since
the emerging wide bandgap power devices, such as silicon carbide (SiC), with superior …
the emerging wide bandgap power devices, such as silicon carbide (SiC), with superior …
Analytical Switching Loss Modeling Based on Datasheet Parameters for mosfets in a Half-Bridge
D Christen, J Biela - IEEE Transactions on Power Electronics, 2018 - ieeexplore.ieee.org
Modern wide-bandgap devices, such as SiC-or GaN-based devices, feature significantly
reduced switching losses, and the question arises if soft-switching operating modes are still …
reduced switching losses, and the question arises if soft-switching operating modes are still …
Evaluation and application of 600 V GaN HEMT in cascode structure
Gallium nitride high electron mobility transistor (GaN HEMT) has matured dramatically over
the last few years. A progressively larger number of GaN devices have been manufactured …
the last few years. A progressively larger number of GaN devices have been manufactured …
[图书][B] Power electronics and control techniques for maximum energy harvesting in photovoltaic systems
Incentives provided by European governments have resulted in the rapid growth of the
photovoltaic (PV) market. Many PV modules are now commercially available, and there are …
photovoltaic (PV) market. Many PV modules are now commercially available, and there are …
Characterization and experimental assessment of the effects of parasitic elements on the MOSFET switching performance
J Wang, HS Chung, RT Li - IEEE Transactions on Power …, 2012 - ieeexplore.ieee.org
This paper presents a comprehensive study on the influences of parasitic elements on the
MOSFET switching performance. A circuit-level analytical model that takes MOSFET …
MOSFET switching performance. A circuit-level analytical model that takes MOSFET …
Analytical loss model of high voltage GaN HEMT in cascode configuration
This paper presents an accurate analytical model to calculate the power loss of a high
voltage Gallium Nitride high electron mobility transistor (GaN HEMT) in cascode …
voltage Gallium Nitride high electron mobility transistor (GaN HEMT) in cascode …
Adaptive multi-level active gate drivers for SiC power devices
State-of-the-art silicon carbide (SiC) power devices provide superior performance over
silicon devices with much higher switching frequencies/speed and lower losses. High …
silicon devices with much higher switching frequencies/speed and lower losses. High …
High-frequency PWM buck converters using GaN-on-SiC HEMTs
M Rodríguez, Y Zhang… - IEEE transactions on …, 2013 - ieeexplore.ieee.org
GaN high electron mobility transistors (HEMTs) are well suited for high-frequency operation
due to their lower on resistance and device capacitance compared with traditional silicon …
due to their lower on resistance and device capacitance compared with traditional silicon …
Analytical methodology for loss calculation of SiC MOSFETs
For evaluating and optimizing the efficiency of power converters, the loss model of the power
semiconductor devices is needed. The analytical loss model is favorable for its simplicity …
semiconductor devices is needed. The analytical loss model is favorable for its simplicity …
Very high frequency PWM buck converters using monolithic GaN half-bridge power stages with integrated gate drivers
Y Zhang, M Rodríguez… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
Integration is a key step in utilizing advances in GaN technologies and enabling efficient
switched-mode power conversion at very high frequencies (VHF). This paper addresses …
switched-mode power conversion at very high frequencies (VHF). This paper addresses …