Exploring machine learning for semiconductor process optimization: a systematic review

YL Chen, S Sacchi, B Dey, V Blanco… - IEEE Transactions …, 2024 - ieeexplore.ieee.org
As machine learning (ML) continues to find applications, extensive research is currently
underway across various domains. This study examines the current methodologies of ML …

Investigation of trap density effect in gate-all-around field effect transistors using the finite element method

M Belkhiria, F Aouaini, S A. Aldaghfag, F Echouchene… - Electronics, 2023 - mdpi.com
Trap density refers to the density of electronic trap states within dielectric materials that can
capture and release charge carriers (electrons or holes) in a semiconductor channel …

In situ differential atomic force microscopy (AFM) measurement for ultra-thin Thiol SAM patterns by area-selective deposition technique

X Gao, H Zhang, S Li, L Wang, X Dai, Y Hu, J Xu… - Surfaces and …, 2024 - Elsevier
Developing novel characterization methods is crucial to enhancing the accuracy and
precision of measurements in semiconductor ultrathin films. By combining" bottom-up" and" …

Nanosheet Field Effect Transistors

M Balasubrahmanyam, A pandey… - ECS Journal of Solid …, 2025 - iopscience.iop.org
Transistor technology plays a crucial role in human life. The aim is to increase the number of
applications and enhance speed in a single integrated circuit (IC). Here, we review the …

Growth of electronic devices to circumvent the upcoming challenges from Artificial Intelligence

A Maria, R Sharma, KK Mishra - 2023 First International …, 2023 - ieeexplore.ieee.org
Large number of electronic devices based on semiconductors have been worked upon
since the discovery of first Bipolar Junction Transistor (BJT) in 1947 by Shockley. Same have …

[PDF][PDF] Exploring Machine Learning for Semiconductor Process Optimization: A Systematic Review

P Leray, S De Gendt - 2024 - researchgate.net
As machine learning continues to find applications, extensive research is currently
underway across various domains. This study examines the current methodologies of …

Two-Dimensional Field Effect Transistor

Y Li - 2023 - openscholarship.wustl.edu
As silicon-based field-effect transistors (FETs) approach their physical limits with channel
lengths approaching 5 nm, the search for new semiconductor materials that can surpass this …