Full silicidation (FUSI) of polysilicon gates promises to be a simple approach for formation of
metal gate electrodes for highly scaled complementary metal oxide semiconductor (CMOS) …

In downscaled poly-Si gate MOSFET devices reliability margin is gained by progressive
wearout. When the poly-Si gate is replaced with a metal gate, the slow wearout phase …

We report novel 1000° C-stable [Ir 3 Si-TaN]/HfLaON CMOS for the first time, where the self-
aligned and gate-first gate-first process are full compatible to current VLSI. Good ϕm-eff of …

We demonstrate for the first time CMOS integration of dual WF (work function) metal gates
on HfSiON using Ni-phase controlled FUSI. The novel integration scheme that we …

We demonstrate for the first time the scalability of NiSi and Ni/sub 3/Si FUSI gate processes
down to 30 nm gate lengths, with linewidth independent phase and V/sub t/control. We show …

The CMOS integration of dual work function (WF) phase-controlled Ni fully silicided (FUSI)
gates on HfSiON was investigated. For the first time, the integration of NiSi FUSI gates on n …

A study of the implementation of Ni fully silicided (FUSI) gates to scaled devices is
presented, addressing the issue of phase control at short gate lengths. A linewidth effect for …

This work presents the first comprehensive evaluation of the manufacturability and reliability
of dual WF phase controlled Ni-FUSI/HfSiON CMOS (NMOS: NiSi; PMOS: Ni 2 Si and Ni 31 …

A versatile method to tune the work function Phi M of metal nitride (MN x) metal gates by
incorporating lanthanide elements for the applications in NMOS devices is demonstrated. By …

The authors have developed a novel high-temperature stable hboxHfSi_x gate for high-
kappa HfSiON gate dielectric. After a 1000 ^circhboxC RTA, the hboxHfSi_x/hboxHfSiON …