Luminescence properties of defects in GaN
MA Reshchikov, H Morkoç - Journal of applied physics, 2005 - pubs.aip.org
Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds
have gained an unprecedented attention due to their wide-ranging applications …
have gained an unprecedented attention due to their wide-ranging applications …
Measurement and analysis of photoluminescence in GaN
MA Reshchikov - Journal of applied physics, 2021 - pubs.aip.org
Photoluminescence (PL) spectroscopy is a powerful tool in studying semiconductor
properties and identifying point defects. Gallium nitride (GaN) is a remarkable …
properties and identifying point defects. Gallium nitride (GaN) is a remarkable …
Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers
ZnO single crystals, epilayers, and nanostructures often exhibit a variety of narrow emission
lines in the spectral range between 3.33 and 3.35 eV which are commonly attributed to …
lines in the spectral range between 3.33 and 3.35 eV which are commonly attributed to …
Bright and fast scintillations of an inorganic halide perovskite CsPbBr3 crystal at cryogenic temperatures
Highly efficient scintillation crystals with short decay times are indispensable for improving
the performance of numerous detection and imaging instruments that use-X-rays, gamma …
the performance of numerous detection and imaging instruments that use-X-rays, gamma …
Analysis of the temperature and excitation intensity dependencies of photoluminescence in undoped GaN films
MA Reshchikov, RY Korotkov - Physical Review B, 2001 - APS
Steady-state photoluminescence (PL) from undoped wurtzite GaN has been studied in detail
over a wide range of temperatures and excitation intensities. Both the observed steps in the …
over a wide range of temperatures and excitation intensities. Both the observed steps in the …
APPLIED PHYSICS REVIEWS
MA Reshchikov, H Morkoç, HW Choi, E Gu… - Journal of Applied …, 2005 - pubs.aip.org
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Tunable and abrupt thermal quenching of photoluminescence in high-resistivity Zn-doped GaN
MA Reshchikov, AA Kvasov, MF Bishop… - Physical Review B …, 2011 - APS
Tunable and abrupt thermal quenching of photoluminescence by increasing temperature
has been observed for the blue band in high-resistivity Zn-doped GaN. The …
has been observed for the blue band in high-resistivity Zn-doped GaN. The …
Data‐Driven Discovery for Robust Optimization of Semiconductor Nanowire Lasers
Active wavelength‐scale optoelectronic components are widely used in photonic integrated
circuitry, however coherent sources of light–namely optical lasers–remain the most …
circuitry, however coherent sources of light–namely optical lasers–remain the most …
Photoluminescence features on the Raman spectra of quasistoichiometric SiC nanoparticles: Experimental and numerical simulations
Visible photoluminescence (PL) broad bands are observed in the Raman spectra of SiC
nanoparticles (np-SiC) with diameters ranging from 10 to 25 nm. The phenomenon is …
nanoparticles (np-SiC) with diameters ranging from 10 to 25 nm. The phenomenon is …
GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices
IA Ajia, Y Yamashita, K Lorenz, MM Muhammed… - Applied Physics …, 2018 - pubs.aip.org
GaN/AlGaN multiple quantum wells (MQWs) are grown on a 201 ð Þ-oriented b-Ga2O3
substrate. The optical and structural characteristics of the MQW structure are compared with …
substrate. The optical and structural characteristics of the MQW structure are compared with …